Defect Detection of Solar Cell Based on Electroluminescence and Thermography Imaging with Different Bias Voltage

LU wei-ming; LI Xing; ZHANG Fu-te; FU xin; HU Hui

doi:10.3788/fgxb20143512.1511

您当前的位置：

首页 >

文章列表页 >

Defect Detection of Solar Cell Based on Electroluminescence and Thermography Imaging with Different Bias Voltage

更新时间：2020-08-12

- Defect Detection of Solar Cell Based on Electroluminescence and Thermography Imaging with Different Bias Voltage
- Chinese Journal of Luminescence Vol. 35, Issue 12, Pages: 1511-1519(2014)
- 作者机构：
  
  泰州德通电气有限公司光伏技术中心,江苏泰州,225300
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143512.1511
  CLC： TN248.2
- Received：16 July 2014，
  
  Revised：24 October 2014，
  
  Published：03 December 2014
- 稿件说明：
移动端阅览
鲁伟明, 李省, 张付特等. 基于不同电压下的电致发光和红外成像的太阳能电池缺陷检测[J]. 发光学报, 2014,35(12): 1511-1519

LU wei-ming, LI Xing, ZHANG Fu-te etc. Defect Detection of Solar Cell Based on Electroluminescence and Thermography Imaging with Different Bias Voltage[J]. Chinese Journal of Luminescence, 2014,35(12): 1511-1519
鲁伟明, 李省, 张付特等. 基于不同电压下的电致发光和红外成像的太阳能电池缺陷检测[J]. 发光学报, 2014,35(12): 1511-1519 DOI： 10.3788/fgxb20143512.1511.

LU wei-ming, LI Xing, ZHANG Fu-te etc. Defect Detection of Solar Cell Based on Electroluminescence and Thermography Imaging with Different Bias Voltage[J]. Chinese Journal of Luminescence, 2014,35(12): 1511-1519 DOI： 10.3788/fgxb20143512.1511.

摘要

利用不同电压下的电致发光和红外热成像技术检测太阳能电池的缺陷.正向电致发光为电子空穴的辐射复合

与太阳能电池的串联电阻和少数载流子扩散长度有关

可以检测太阳能电池的断栅、隐裂等缺陷;反向电致发光为高电场强度下载流子的带内发光

可以探测弱的线性漏电和击穿

并且弱的线性漏电只在高的反向偏压下发光.利用不同电压下的红外热成像可以检测出线性和非线性漏电

强线性漏电在正反偏压电压下均有明显发热的现象

而非线性漏电在何种偏压状态下占优势取决于漏电类型.红外热成像无法探测出第二类击穿和第三类击穿.

Abstract

The electroluminescence and infrared thermography were used to detect the defects of the solar cells by applying different forward bias and reverse bias voltage. The solar cell under forward bias mainly emits infrared light from 850 to 1 200 nm due to the recombination of electron and hole. The intensity of the emitted light depends on the series resistance and minority carrier diffusion length of the solar cell

so it can be used to detect the defects of finger disturbing

crack

and electrode etching

et al.

The emission of light under reverse bias is intra-band emission which covers a wide spectrum from visible light to IR. The breakdown can be detected by reverse bias electroluminescence (RBEL). Only under high bias

weak Ohmic shunt appears in RBEL. Linear and nonlinear shunt can be detected using IR thermography under different bias. Strong Ohimc shunt can be detected in forward and reverse bias. The nonlinear shunt depends on the type.

关键词

Keywords

references

Zhang L C, Xu X X, Yang Z J, et al. An efficient method for monitoring the shunts in silicon solar cells during fabrication processes with infrared imaging [J]. J. Semicond., 2009, 30(7):076001-1-4.

Breitenstein O, Langenkamp M, Rakotoniaina J P, et al. The imaging of shunts in solar cells by infrared lock-in thermography [C] //17th European Photovoltaic Solar Energy Conference, IEEE: Munich, 2001:1499-1502.

Li Y H, Pan M, Pang A S, et al. The application of electroluminescence imaging to detection the hidden defects in silicon solar cells [J]. Chin. J. Lumin.(发光学报), 2011, 32(4):378-382 (in Chinese).

Breitenstein O, Bauer J, Trupke T, et al. On the detection of shunts in silicon solar cells by photo and electroluminescence imaging [J]. Prog. Photovolt.: Res. Appl., 2008, 16(4):325-330.

Breitenstein O, Rakotoniaina J P, Al Rifai M H, et al. Shunt types in crystalline silicon solar cells [J]. Prog. Photovolt.: Res. Appl., 2004, 12:529-538.

Breitenstein O, Bauer J, Bothe K, et al. Understanding junction breakdown in multicrystalline solar cells [J]. J. Appl. Phys., 2011, 109(7):071101-1-10.

Wrfel P, Trupke T, Puzzer T, et al. Diffusion lengths of silicon solar cells from luminescence images [J]. J. Appl. Phys., 2007, 101(12):123110-1-10.

Schneemann M, Kirchartz T, Carius R, et al. Measurement and modeling of reverse biased electroluminescence in multi-crystalline silicon solar cells [J]. J. Appl. Phys., 2013, 114(13):134509-1-6.

Breitenstein O, Bauer J, Rakotoniaina J P, et al. Material induced shunts in multicrystalline silicon solar cells [J]. Semicond., 2007, 41(4):440-443.

Xie S W, Xiao X, Tan J J, et al. Recent progress in dye-sensitized solar cells using graphene-based electrodes [J]. Chin. Opt.(中国光学), 2014, 7(1):47-56 (in Chinese).

Lausch D, Petter K, BakowskieR, et al. Identification of pre-breakdown mechanism of silicon solar cells at lowreverse voltages [J]. Appl. Phys. Lett., 2010, 97(7):073506-1-3.

Views

251

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Defect Detection of Solar Cells Based on Electroluminescence Imaging

Research Progress of Neutral Blue Iridium Complexes in OLEDs

Efficient Red Iridium（Ⅲ） Complexes with Four-membered Ring Ir-S-C-S Framework and OLED Performance

Performance of Narrow-linewidth Red Emitted Electroluminescent Devices Based on Quasi-two-dimensional Perovskite

Cs₂（Ag∶Cu）BiBr₆ Double Perovskite Solar Cells

Related Author

CHEN Wen-zhi

ZHANG Feng-yan

ZHANG Ran

LI Chao

WU Shaohua

LU Guangzhao

ZHONG Xiangyong

XIE Qifei

Related Institution

School of Energy Research, Xiamen University

Institute of Information Technology， Shenzhen Institute of Information Technology

College of Chemistry and Materials Science， Hebei Normal University

College of Chemistry and Chemical Engineering， Shangqiu Normal University

State Key Laboratory of Rare Earth Resource Utilization， Changchun Institute of Applied Chemistry， Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰