Thermal Analysis of High Power Semiconductor Laser Bar

LI Jiang; LI Chao; XU Hao; ZHANG Qiang; ZHOU Min-chao

doi:10.3788/fgxb20143512.1474

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Thermal Analysis of High Power Semiconductor Laser Bar

更新时间：2020-08-12

- Thermal Analysis of High Power Semiconductor Laser Bar
- Chinese Journal of Luminescence Vol. 35, Issue 12, Pages: 1474-1479(2014)
- 作者机构：
  
  中国科学院苏州生物医学工程技术研究所半导体光电子技术研究室,江苏苏州,215163
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143512.1474
  CLC： TN248.4
- Received：22 August 2014，
  
  Revised：14 September 2014，
  
  Published：03 December 2014
- 稿件说明：
移动端阅览
李江, 李超, 徐昊等. 高功率半导体巴条激光器的热特性分析[J]. 发光学报, 2014,35(12): 1474-1479

LI Jiang, LI Chao, XU Hao etc. Thermal Analysis of High Power Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2014,35(12): 1474-1479
李江, 李超, 徐昊等. 高功率半导体巴条激光器的热特性分析[J]. 发光学报, 2014,35(12): 1474-1479 DOI： 10.3788/fgxb20143512.1474.

LI Jiang, LI Chao, XU Hao etc. Thermal Analysis of High Power Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2014,35(12): 1474-1479 DOI： 10.3788/fgxb20143512.1474.

摘要

对采用5层叠焊的微通道无氧铜热沉冷却的巴条激光器进行了流体动力学(CFD)分析.建立了条宽10 mm、腔长1.5 mm巴条芯片的流固耦合共轭传热模型

得到了不同流量水冷下激光器的热阻和压力损失曲线.分析了300 mL/min水流时

激光器的温度分布和冷却水的流动性能.实验条件下

测试了该微通道热沉封装的808 nm巴条激光器的热阻和压力损失.数值计算和实验测试所得的结果一致

在300 mL/min水流下

巴条热阻为0.38 ℃/W

在温度不高于70 ℃时可满足连续模式下90 W的散热要求.

Abstract

Computational fluid dynamics (CFD) simulation and experimental analysis are presented for a semiconductor laser bar

which is cooled by a 5-layer oxygen-free copper micro-channel heat sink. A fluid-solid coupling conjugate heat transfer model is built for the micro-channel cooler and 10 mm-wide

1.5 mm-cavities long bar. The curves of thermal resistance and pressure drop to flowing rate are plotted. The temperature of the laser bar and the characteristic of the cooling water are studied at 300 mL/min flowing rate. An experimental testing is performed for the thermal resistance and pressure drop of an 808 nm laser

which is packaged with the micro-channel cooler. The simulation results consistent with experiment. In the flowing rate of 300 mL/min

the thermal resistance is 0.38 ℃/W

which can dissipate a continuous 90 W heat below 70 ℃.

关键词

Keywords

references

Wang D, Li X Q. Latest developmentst and application status of diode lasers [J]. Opt. Precision Eng.(光学精密工程), 2001, 9(3):279-283 (in Chinese).

Tian Z H, Sun C L, Cao J S, et al. Junction temperature measurement of high power diode lasers [J]. Opt. Precision Eng.(光学精密工程), 2011, 19(6):1244-1249 (in Chinese).

Kreutz E W, Pirch N, Ebert T, et al. Simulation of micro-channel heat sinks for optoelectronic microsystems [J]. Microelectron. J., 2000, 31(9):787-790.

Yu E C, Prekwas A J. Thermomechanical design of a microchannel cooled semiconductor laser diode array package [J]. SPIE, 1999, 3625:535-542.

Yao S, Ding P, Liu J, et al. Microchannel heat sink of high beam quality semiconductor laser array [J]. Chin. J. Laser (中国激光), 2009, 36(9):2286-2289 (in Chinese).

Hu L M, Li Z J, Qin L, et al. Thermal analysis of high-power, high-duty-cycle laser diode array [J]. Acta Optica Sinica (光学学报), 2010, 30(4):1055-1060 (in Chinese).

Tao W Q. Numerical Heat Transfer [M]. Xi'an: Xi'an Jiaotong University Press, 2001:1-14 (in Chinese).

Joyce W B, Dixon R W. Thermal resistance of heterostructure lasers [J]. J. Appl. Phys., 1975, 46(2):855-862.

Wang S C, Rong Y M. Hydraulic Transmission [M]. Beijing: Chinese Forestry Press, 2006, 8:37-37 (in Chinese).

Xu H W, Ren Y X, An Z F, et al. Packaging of 808 nm 1 500 W continuous wave operation perpendicularity laser diode stack [J]. Chin. J. Laser (中国激光), 2010, 37(11):2286-2289 (in Chinese).

Guo Z Y. Frontier of heat transfer-microscale heat transfer [J]. Adv. Mechan.(力学进展), 2000, 30(1):1-6 (in Chinese).

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