Self-assembled Channel Transparent Thin-film Transistors Based on Sb2O3/Ag/Sb2O3 Multilayer Transparent Conductive Films

ZHANG Nan; LIU Xing-yuan

doi:10.3788/fgxb20143512.1469

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Self-assembled Channel Transparent Thin-film Transistors Based on Sb₂O₃/Ag/Sb₂O₃ Multilayer Transparent Conductive Films

更新时间：2020-08-12

- Self-assembled Channel Transparent Thin-film Transistors Based on Sb₂O₃/Ag/Sb₂O₃ Multilayer Transparent Conductive Films
- Chinese Journal of Luminescence Vol. 35, Issue 12, Pages: 1469-1473(2014)
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143512.1469
  CLC： O484.4;TN321
- Received：23 December 2013，
  
  Revised：22 February 2014，
  
  Published Online：08 August 2014，
  
  Published：03 December 2014
- 稿件说明：
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张楠, 刘星元,. 基于Sb2O3/Ag/Sb2O3叠层透明导电薄膜的自组装沟道透明薄膜晶体管[J]. 发光学报, 2014,35(12): 1469-1473

ZHANG Nan, LIU Xing-yuan,. Self-assembled Channel Transparent Thin-film Transistors Based on Sb2O3/Ag/Sb2O3 Multilayer Transparent Conductive Films[J]. Chinese Journal of Luminescence, 2014,35(12): 1469-1473
张楠, 刘星元,. 基于Sb2O3/Ag/Sb2O3叠层透明导电薄膜的自组装沟道透明薄膜晶体管[J]. 发光学报, 2014,35(12): 1469-1473 DOI： 10.3788/fgxb20143512.1469.

ZHANG Nan, LIU Xing-yuan,. Self-assembled Channel Transparent Thin-film Transistors Based on Sb2O3/Ag/Sb2O3 Multilayer Transparent Conductive Films[J]. Chinese Journal of Luminescence, 2014,35(12): 1469-1473 DOI： 10.3788/fgxb20143512.1469.

摘要

首次利用Sb

/Ag/Sb

(SAS)叠层透明导电薄膜作为透明电极

并采用衍射自组装沟道的方法研制了一种透明薄膜晶体管.通过一次掩模工艺

在电子束热蒸发过程中的SAS源漏电极之间制作沟道层.SAS透明导电薄膜具有优异的光电性能.研制的透明薄膜晶体管具有良好的器件性能

其迁移率高达11.36 cm

/(Vs).整个器件在可见光范围内的平均透过率为80%.结果表明

这种透明薄膜晶体管有希望应用于低成本透明光电子产品中.

Abstract

A fabrication method of transparent thin-film transistors based on Sb

/Ag/Sb

(SAS) multi-layer transparent conductive film is developed by self-assembling diffraction. A self-assembled channel between SAS source/drain electrodes was formed by electron beam thermal evaporation in the one-shadow-mask process. The multi-layer transparent conductive film has desirable photoelectrical properties. Consequently

we obtained high performance devices with mobility of 11.36 cm

/(Vs) and an average visible range transmittance of 80%. Our results demonstrate that such transparent device is promising for low-cost optoelectronic product.

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Keywords

references

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Related Institution

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University of Chinese Academy of Sciences, Beijing 100049, China

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