Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon

CHEN Jing-dong; ZHANG Ting; FANG Yu-hong

doi:10.3788/fgxb20143512.1427

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Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon

更新时间：2020-08-12

- Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon
- Chinese Journal of Luminescence Vol. 35, Issue 12, Pages: 1427-1431(2014)
- 作者机构：
  
  1. 闽南师范大学物理与信息工程学院, 福建漳州 363000
  2. 闽南师范大学化学与环境学院,福建漳州,363000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143512.1427
  CLC： O482.31
- Received：15 August 2014，
  
  Revised：21 September 2014，
  
  Published：03 December 2014
- 稿件说明：
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陈景东, 张婷, 方玉宏. 非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响[J]. 发光学报, 2014,35(12): 1427-1431

CHEN Jing-dong, ZHANG Ting, FANG Yu-hong. Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014,35(12): 1427-1431
陈景东, 张婷, 方玉宏. 非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响[J]. 发光学报, 2014,35(12): 1427-1431 DOI： 10.3788/fgxb20143512.1427.

CHEN Jing-dong, ZHANG Ting, FANG Yu-hong. Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014,35(12): 1427-1431 DOI： 10.3788/fgxb20143512.1427.

摘要

采用水热腐蚀法制备了铁钝化多孔硅样品

样品光致发光谱的荧光峰位于2.0 eV附近

半峰宽约为0.40 eV.激发波长从240 nm增大到440 nm的过程中

荧光峰先红移再蓝移

最后基本稳定

变化曲线呈勺型.通过分析15片发光多孔硅样品的统计结果

发现荧光峰逆转所对应的激发波长位于330 nm附近

相应的激发光子能量约为3.8 eV.样品光致发光谱随激发波长的勺型变化过程与 SiO

和 SiO

HOSi 两类非桥氧空穴发光中心共同作用时的发光行为一致.

Abstract

Hydrothermal etching method was employed to prepare iron-passivated porous silicon (IP-Si) samples with peak energy around 2.0 eV and FWHM of 0.40 eV. As the excitation wavelength increases from 240 to 440 nm

the peak energy of photoluminescence red-shifts first

and then blue-shifts before it reaches a constant energy. The changing curve demonstrates a spoon-like pattern. By analyzing the statistics results from 15 IP-Si samples

it is found that the turnover excitation wavelength corresponding to the peak energy is about 330 nm and the related photon energy is 3.8 eV. The spoon-like relationship found between the peak energy and excitation wavelength is in good agreement with the photoluminescence behavior under the combined action of two types of non-bridging oxygen hole center of SiO

and SiO

HOSi .

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references

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Related Institution

College of Physics and Information Engineering, Minnan Normal University

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青岛大学纤维新材料与现代纺织实验室, 国家重点实验室培育基地, 青岛大学化学化工与环境学院

潍坊教育学院, 化学工程系, 山东, 青州

青岛大学, 物理学院

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