Top-emitting Organic Light-emitting Device Integrated Pixel Driven by Low Voltage Organic Thin Film Transistor

HU Sheng-kun; JIN Yu; WU Zhi-jun; WANG Wei

doi:10.3788/fgxb20143511.1370

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Top-emitting Organic Light-emitting Device Integrated Pixel Driven by Low Voltage Organic Thin Film Transistor

更新时间：2020-08-12

- Top-emitting Organic Light-emitting Device Integrated Pixel Driven by Low Voltage Organic Thin Film Transistor
- Chinese Journal of Luminescence Vol. 35, Issue 11, Pages: 1370-1375(2014)
- 作者机构：
  
  1. 华侨大学信息科学与工程学院, 福建厦门 361021
  2. 集成光电子学国家重点联合实验室吉林大学实验区, 吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143511.1370
  CLC： TN321.5+.5;TN383+.1
- Received：14 August 2014，
  
  Revised：21 September 2014，
  
  Published：03 November 2014
- 稿件说明：
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胡胜坤, 金玉, 吴志军等. 低电压有机薄膜晶体管驱动顶发射有机发光二极管的集成像素的研制[J]. 发光学报, 2014,35(11): 1370-1375

HU Sheng-kun, JIN Yu, WU Zhi-jun etc. Top-emitting Organic Light-emitting Device Integrated Pixel Driven by Low Voltage Organic Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014,35(11): 1370-1375
胡胜坤, 金玉, 吴志军等. 低电压有机薄膜晶体管驱动顶发射有机发光二极管的集成像素的研制[J]. 发光学报, 2014,35(11): 1370-1375 DOI： 10.3788/fgxb20143511.1370.

HU Sheng-kun, JIN Yu, WU Zhi-jun etc. Top-emitting Organic Light-emitting Device Integrated Pixel Driven by Low Voltage Organic Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014,35(11): 1370-1375 DOI： 10.3788/fgxb20143511.1370.

摘要

研究了有机薄膜晶体管(OTFT)驱动顶发射有机发光二极管(OLED)的集成制备技术。通过减小栅绝缘层的厚度

达到降低OTFT工作电压的目的。OLED采用标准的绿光器件

利用超薄的Al薄膜作为半透明阴极实现顶发射功能。实现了低电压工作的OTFT与顶发射OLED的集成

其中OTFT的阈值电压为2.0 V

饱和场效应迁移率为0.40 cm

-1

。基于实验数据

对集成像素的电特性进行了计算分析

在-5~-10 V的栅电压调控下

像素亮度能在50~250 cd/m

的范围内实现线性灰度调控。

Abstract

The integration of the top-emitting organic light-emitting diode (OLED) driven by the organic thin film transistor (OTFT) was investigated. The OTFT operating voltage is decreased

via

reducing the thickness of the gate insulator layer. OLED adopts standard devices structure with green emission and employs the thin Al film as transparent cathode to realize top-emission. The integration of low-voltage operation OTFT and top-emitting OLED is achieved

while the threshold voltage of the OTFT is 2.0 V and the saturation field effect mobility is 0.40 cm

-1

. Based on the experimental data

the electrical characteristic of the integrated pixel is calculated and analyzed. Under the control of gate voltage from -5 to -10 V

the linear gray-scale control can be realized within the range of pixel brightness from 50 to 250 cd/m

关键词

Keywords

references

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