LIU Chong, WEI Min, YANG Fan etc. Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014,35(11): 1365-1369
LIU Chong, WEI Min, YANG Fan etc. Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014,35(11): 1365-1369 DOI: 10.3788/fgxb20143511.1365.
Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor
根据TLM(Transmission line model)理论推算得出Au电极具有三者中最小的接触电阻。
Abstract
Indium gallium zinc oxide thin film transistors (IGZO-TFTs) with bottom-gate top structure were fabricated on n-type silicon substrates using radio frequency (RF) magnetron sputtering method. Three kinds of metal material such as Au
Cu
and Al were used to fabricate electrode
respectively
and the effects of different electrode materials on IGZO TFT performance were investigated. The output characteristic and transfer characteristic of the TFT devices were tested. The best performance was obtained when Au was used to fabricate electrode
its saturation output current was 17.9 A
and on-off current ratio was up to 1.410
6
. In addition
the contact characteristics between three kinds of electrodes and IGZO thin film were analyzed based on their work function. Au electrode had the smallest contact resistance of these three metal according to the TLM(transmission line model) theory.
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references
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