Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity

ZHENG Jian; QIAO Qian; ZHANG Zhen-zhong; WANG Li-kun; HAN Shun; ZHANG Ji-ying; LIU Yi-chun

doi:10.3788/fgxb20143511.1291

您当前的位置：

首页 >

文章列表页 >

Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity

更新时间：2020-08-12

- Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity
- Chinese Journal of Luminescence Vol. 35, Issue 11, Pages: 1291-1296(2014)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 浙江海洋学院船舶与海洋工程学院,浙江舟山,316022
  3. 东北师范大学先进光电功能材料研究中心,吉林长春,130024
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143511.1291
  CLC： O484.4
- Received：20 April 2014，
  
  Revised：30 May 2014，
  
  Published Online：08 August 2014，
  
  Published：03 November 2014
- 稿件说明：
移动端阅览
郑剑, 乔倩, 张振中等. 基于立方相MgZnO薄膜的高响应度深紫外探测器[J]. 发光学报, 2014,35(11): 1291-1296

ZHENG Jian, QIAO Qian, ZHANG Zhen-zhong etc. Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity[J]. Chinese Journal of Luminescence, 2014,35(11): 1291-1296
郑剑, 乔倩, 张振中等. 基于立方相MgZnO薄膜的高响应度深紫外探测器[J]. 发光学报, 2014,35(11): 1291-1296 DOI： 10.3788/fgxb20143511.1291.

ZHENG Jian, QIAO Qian, ZHANG Zhen-zhong etc. Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity[J]. Chinese Journal of Luminescence, 2014,35(11): 1291-1296 DOI： 10.3788/fgxb20143511.1291.

摘要

在超过相变临界厚度的立方相Mg

0.29

0.71

O薄膜上制备了Au插指电极MSM结构探测器件

30 V偏压下的峰值响应度可达27.9 A/W(268 nm)

对应的外量子效率为12900%。分析认为原位生长在立方相MgZnO薄膜上的极薄的结构相变层引入了高密度的界面态

在立方相薄膜表面电极接触中起到了降低势垒、减小耗尽层宽度、增强电极注入电子的能力的作用

使得器件形成高的光导增益。

Abstract

An MSM solar-blind UV photodetector was fabricated on Mg

0.29

0.71

O thin film

which showed a large responsivity of 27.9 A/W at 30 V bias (268 nm). The ultra thin phase-transition layer leads to the improvement of the metal-semiconductor contact and more internal gain. The results provide a new choice to realize high performance MgZnO-based solar-blind UV detectors.

关键词

Keywords

references

Yang W, Hullavarad S S, Nagaraj B, et al. Compositionally-tuned epitaxial cubic MgxZn1-xO on Si (100) for deep ultraviolet photodetectors [J]. Appl. Phys. Lett., 2003, 82(20):3424-3426.

Ju Z G, Shan C X, Jiang D Y, et al. MgxZn1-xO -based photodetectors covering the whole solar-blind spectrum range [J]. Appl. Phys. Lett., 2008, 93(17):173505-1-3.

Du X L, Mei Z X, Liu Z L, et al. Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors [J]. Adv. Mater., 2009, 21(45):4625-4630.

Zheng Q H, Huang F, Ding K, et al. MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates [J]. Appl. Phys. Lett., 2011, 98(22):221112-1-3.

Yang W, Vispute R D, Choopun S, et al. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films [J]. Appl. Phys. Lett., 2001, 78(18):2787-2789.

Liu Y, Gorla C R, Liang S, et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD [J]. J. Electron. Mater., 2000, 29(1):69-74.

Wang L K, Ju Z G, Zhang J Y, et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [J]. Appl. Phys. Lett., 2009, 95(13):131113-1-3.

Kunisu M, Tanaka I, Yamamoto T, et al. The formation of a rock-salt type ZnO thin film by low-level alloying with MgO [J]. J. Phys.: Condensed Matter, 2004, 16(21):3801-3806.

Garrido J A, Monroy E, Izpura I, et al. Photoconductive gain modelling of GaN photodetectors [J]. Semicond. Sci. Technol., 1998, 13(6):563-568.

Liu K W, Sakurai M, Aono M. ZnO-based ultraviolet photodetectors [J]. Sensors, 2010, 10(9):8604-8634.

Liu E K. Semiconductor Physics [M]. Beijing: Natinal Defence Industry Press, 1997:186 (in Chinese).

Brillson L J, Lu Y. ZnO Schottky barriers and Ohmic contacts [J]. J. Appl. Phys., 2011, 109(12):121301-1-34.

Tabares G, Hierro A, Ulloa J M, et al. High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes [J]. Appl. Phys. Lett., 2010, 96(10):101112-1-3.

Hou Y N, Mei Z X, Liu Z L, et al. Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain [J]. Appl. Phys. Lett., 2011, 98(10):103506-1-3.

Views

134

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Controlled Growth of Pure Cubic Mg_0.3Zn_0.7O Thin Films on c-plane Sapphire by Introducing Graded Buffer Layer

Epitaxial (110)-oriented Cubic MgZnO Films on m-plane Sapphire for Solar-blind UV Photodetectors

Related Author

LIU Yi-chun

Related Institution

University of Chinese Academy of Sciences

Center for Advanced Optoelectronic Functional Materials Research, Northeast Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰