The problem of OLED current decrease with threshold voltage (
V
th
) shift of a-IGZO TFTs still remains to be solved. In this paper
we continued to investigate the compensation effect for
V
th
shift in AMOLED pixel circuits based on a-IGZO TFTs. With the device models extracted from the experimental data on a-IGZO TFTs prepared in our lab
two kinds of pixel circuits
i.e
2T1C and 4T1C were comparatively studied. The results show that 4T1C pixel circuit has excellent compensation effect for bias-stress instability
and the increasing storage capacitor and
W
/
L
of driving TFTs might lead to better holding capacity of this circuit.
关键词
Keywords
references
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