Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering

LIAO Jin-sheng; LIU Bao; LIU Shao-hua; ZHONG Lai-fu; FU Jun-xiang

doi:10.3788/fgxb20143510.1234

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Photoluminescence Properties of Yb³⁺-doped CaWO₄ Thin Films Grown by Radio Frequency Magnetron Sputtering

更新时间：2020-08-12

- Photoluminescence Properties of Yb³⁺-doped CaWO₄ Thin Films Grown by Radio Frequency Magnetron Sputtering
- Chinese Journal of Luminescence Vol. 35, Issue 10, Pages: 1234-1239(2014)
- 作者机构：
  
  江西理工大学冶金与化学工程学院,江西赣州,341000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143510.1234
  CLC： O484.4
- Received：26 June 2014，
  
  Revised：09 August 2014，
  
  Published：03 October 2014
- 稿件说明：
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廖金生, 刘宝, 柳少华等. 射频磁控溅射法制备的CaWO4：Yb3+薄膜及其发光性能研究[J]. 发光学报, 2014,35(10): 1234-1239

LIAO Jin-sheng, LIU Bao, LIU Shao-hua etc. Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2014,35(10): 1234-1239
廖金生, 刘宝, 柳少华等. 射频磁控溅射法制备的CaWO4：Yb3+薄膜及其发光性能研究[J]. 发光学报, 2014,35(10): 1234-1239 DOI： 10.3788/fgxb20143510.1234.

LIAO Jin-sheng, LIU Bao, LIU Shao-hua etc. Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2014,35(10): 1234-1239 DOI： 10.3788/fgxb20143510.1234.

摘要

采用射频磁控溅射法制备了CaWO

：Yb

薄膜并考察了沉积气压和时间对其结构、形貌和发光性能的影响。在不同的气压下，薄膜的XRD结果与四方相白钨矿结构相吻合，并且沿（004）方向择优生长。SEM图像显示，薄膜表面由椭圆形颗粒和孔洞组成。在260 nm激发下，Yb

在994 nm处发出强近红外光，并且其强度随着溅射气压的升高总体是不规律的，而随着溅射时间的增加先增强后减弱。由于优良的发光性能，CaWO

：Yb

薄膜可作为潜在增强硅太阳能电池性能的发光转化膜。

Abstract

-doped CaWO

thin films were prepared by radio frequency (RF) magnetron sputtering and the influence of different deposition pressures and time on the structure

surface morphology and optical properties of films were discussed. XRD results confirm that the samples have a tetragonal scheelite structure and the films have a preferential orientation along the (004) direction under different deposition pressures. SEM images show that the surface morphology of the film consists of spherical-like grains and voids. PL spectra indicate that the films emit strong near infrared light centered at 994 nm under 260 nm excitation. The luminescence intensity of Yb

trends to irregular with the increasing of sputtering pressure

and firstly increases and then decreases with the increasing of sputtering time. Excellent luminescence properties of CaWO

:Yb

thin film might be regarded as a potential luminescence converter layer for enhanced silicon solar cell performance.

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Keywords

references

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