2 &mu;m InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

AN Ning; LIU Guo-jun; LI Zhan-guo; CHANG Liang; WEI Zhi-peng; MA Xiao-hui

doi:10.3788/fgxb20143510.1205

您当前的位置：

首页 >

文章列表页 >

2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

更新时间：2020-08-12

- 2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer
- Chinese Journal of Luminescence Vol. 35, Issue 10, Pages: 1205-1209(2014)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143510.1205
  CLC： TN248.4
- Received：12 July 2014，
  
  Revised：08 August 2014，
  
  Published：03 October 2014
- 稿件说明：
移动端阅览
安宁, 刘国军, 李占国等. 具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器[J]. 发光学报, 2014,35(10): 1205-1209

AN Ning, LIU Guo-jun, LI Zhan-guo etc. 2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer[J]. Chinese Journal of Luminescence, 2014,35(10): 1205-1209
安宁, 刘国军, 李占国等. 具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器[J]. 发光学报, 2014,35(10): 1205-1209 DOI： 10.3788/fgxb20143510.1205.

AN Ning, LIU Guo-jun, LI Zhan-guo etc. 2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer[J]. Chinese Journal of Luminescence, 2014,35(10): 1205-1209 DOI： 10.3788/fgxb20143510.1205.

摘要

为了降低2 m InGaAsSb/AlGaAsSb 量子阱激光器的阈值电流并获得良好的温度特性，在p型波导层及限制层之间引入AlGaAsSb电子阻挡层。采用理论计算方法模拟了电子阻挡层对 InGaAsSb/AlGaAsSb LD输出特性的影响。研究结果表明：电子阻挡层结构可有效减少2 m InGaAsSb/AlGaAsSb 量子阱激光器的Auger复合，抑制量子阱中导带电子向p型限制层的溢出，降低器件的阈值电流，同时改善了温度敏感特性。

Abstract

In order to reduce the threshold current and obtain the good temperature characteristics of 2 m InGaAsSb/AlGaAsSb diode laser

AlGaAsSb electronic stopper layer (ESL) was introduced between p-waveguide and p-cladding layer. The research was conducted by LASTIP. The simulated results reveal that ESL can reduce the threshold current and improve the temperature characteristics of LD effectively. All the advantages are due to the lower Auger recombination rate in the quantum wells and smaller electron concentrations in the p-side

which are caused by the higher band offset between ESL and p-waveguide.

关键词

Keywords

references

Shterengas L, Belenky G, Kisin M V, et al. High power 2.4 m heavily strained type-I quantum well GaSb-based diode lasers with more than 1 W of continuous wave output power and a maximum power-conversion efficiency of 17.5%[J]. Appl. Phys. Lett., 2007, 90(1):011119-1-3.

Shan H, Li M. Effects of structure of InGaAsSb/AlGaAsSb multi-quantum well based on Al and In change on X-ray double crystal diffraction and photoluminescence properties[J]. Chin. J. Lumin.(发光学报), 2013, 34(1):68-71 (in Chinese).

Wagner J, Mann C, Rattunde M, et al. Infrared semiconductor lasers for sensing and diagnostics[J]. Appl. Phys. A, 2004, 78(4):505-512.

Reboul J R, Cerutti L, Rodriguez J B, et al. Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si[J]. Appl. Phys. Lett., 2011, 99(12):121113-1-3.

Xia R D, Chang Y, Zhuang W H. The Auger compound analysis of DH laser[J]. Acta Electronic Sinica (电子学报), 1985, 23(8):112-114 (in Chinese).

Chen T R. Carrier leakage and temperature sensitivity of threshold current in InGaAsP/InP lasers[J]. Acta Electronica Sinica (电子学报), 1985, 13(1):65-71 (in Chinese).

Zhao F, Zhang Y Y, Song J J, et al. High internal quantum efficiency blue light-emitting diodes with triangular shaped InGaN/GaN multiple quantum wells[J]. Chin. J. Lumin.(发光学报), 2013, 34(1):66-72 (in Chinese).

Chen Q D. Temperature dependence of threshold current in 1.3 m InGaAsP/InP double heterostructure lasers[J]. Semicond. Optoelectron.(半导体光电), 1990, 11(2):156-161 (in Chinese).

Xu H W, Ning Y Q, Zeng Y G, et al. Design and epitaxial growth of quantum-well for 852 nm laser diode[J]. Opt. Precision Eng.(光学精密工程), 2013, 21(3):590-597 (in Chinese).

Li Z G. Study on Epitaxial Growth of 2 m Semiconductor Laser Materials and Device Fabrication[D]. Changchun: Changchun University of Science and Technology, 2010 (in Chinese).

Yu H L, Chen X Y, Di J A. Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells[J]. Chin. Opt.(中国光学), 2013, 6(5):710-716 (in Chinese).

Alahyarizadeh G H, Hassan Z, Thahab S M, et al. Investigation of the performance characteristics of 500 nm to 510 nm green InGaN MQWs laser diodes[J]. Digest J. Nanomater. Biostruct., 2013, 8(2):529-540.

Borca T T, Song D W, Meyer J R, et al. Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices[J]. J. Appl. Phys., 2002, 92(9):4994-4998.

Zhou S L, Xiong D P, Qin Y L. Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs[J]. J. Semicond., 2009, 30(4):044003-1-4.

Liu D, Ning Y Q, Zhang J L, et al. High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array[J]. Opt. Precision Eng.(光学精密工程), 2012, 20(10):2147-2153 (in Chinese).

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

High Power 970 nm Semiconductor Laser With A Tunable Grating External Cavity

Research Progress of 2 μm Ho-doped Solid-state Laser

Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers

Tm³⁺/Ho³⁺ Co-doped Tellurite Microstructure Fiber Lasers

Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode

Related Author

BO Baoxue

FU Dingyang

ZHAO Renze

ZHANG Yue

GAO Xin

SU Peng

ZHANG Wan-qiu

DAI Tong-yu

Related Institution

State Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology

Jilin Key Laboratory of Solid-state Laser Technology and Application, Changchun University of Science and Technology

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology

Changchun China Optical Science Technology Museum

Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

DOI：10.3788/fgxb20143510.1205

摘要

Abstract

关键词

Keywords

references