High Performance C60 Organic Field-effect Transistors with Albumen as The Gate Dielectric

DU Bo-qun; CHENG Xiao-man; LIANG Xiao-yu; FAN Jian-feng; BAI Xiao

doi:10.3788/fgxb20143509.1104

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High Performance C₆₀ Organic Field-effect Transistors with Albumen as The Gate Dielectric

更新时间：2020-08-12

- High Performance C₆₀ Organic Field-effect Transistors with Albumen as The Gate Dielectric
- Chinese Journal of Luminescence Vol. 35, Issue 9, Pages: 1104-1108(2014)
- 作者机构：
  
  1. 天津理工大学理学院, 天津 300384
  2. 天津理工大学教育部显示材料与光电器件重点实验室, 天津光电材料与器件重点实验室, 天津 300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143509.1104
  CLC： TN386
- Received：13 May 2014，
  
  Revised：10 June 2014，
  
  Published Online：28 February 2014，
  
  Published：03 September 2014
- 稿件说明：
移动端阅览
杜博群, 程晓曼, 梁晓宇等. 基于蛋清栅绝缘层的高性能C60有机场效应晶体管[J]. 发光学报, 2014,35(9): 1104-1108

DU Bo-qun, CHENG Xiao-man, LIANG Xiao-yu etc. High Performance C60 Organic Field-effect Transistors with Albumen as The Gate Dielectric[J]. Chinese Journal of Luminescence, 2014,35(9): 1104-1108
杜博群, 程晓曼, 梁晓宇等. 基于蛋清栅绝缘层的高性能C60有机场效应晶体管[J]. 发光学报, 2014,35(9): 1104-1108 DOI： 10.3788/fgxb20143509.1104.

DU Bo-qun, CHENG Xiao-man, LIANG Xiao-yu etc. High Performance C60 Organic Field-effect Transistors with Albumen as The Gate Dielectric[J]. Chinese Journal of Luminescence, 2014,35(9): 1104-1108 DOI： 10.3788/fgxb20143509.1104.

摘要

采用生物材料（蛋清）作为栅绝缘层制备了基于C

为有源层的有机场效应晶体管。器件展现出了合理的电学特性

场效应迁移率和阈值电压分别为2.59 cm

-1

和1.25 V。有机场效应晶体管展现良好性能的原因是蛋清具有较高的介电常数及热退火后形成的光滑表面形貌。实验结果表明

对于制备有机场效应晶体管来说

蛋清是一种有前途的绝缘层材料。

Abstract

We fabricate C

-based organic field-effect transistors (OFETs) with a biomaterial (albumen) as the gate dielectrics. The devices demonstrate reasonable electrical characteristics. The effective field-effect mobility is 2.59 cm

-1

and the threshold voltage is 1.25 V. The enhanced performances of the OFETs are attributed to the high dielectric constant

smooth surface after the appropriate thermal treatment of the albumen dielectric. The experiments show that albumen is a promising dielectric material for OFETs.

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references

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