Amplified Spontaneous Emission from The Blend Films of F8BT and P3HT

CHENG Hao; HOU Yan-bing; QIN Liang; HU Yu-feng; LOU Zhi-dong; TENG Feng

doi:10.3788/fgxb20143508.1003

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Amplified Spontaneous Emission from The Blend Films of F8BT and P3HT

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- Amplified Spontaneous Emission from The Blend Films of F8BT and P3HT
- Chinese Journal of Luminescence Vol. 35, Issue 8, Pages: 1003-1008(2014)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143508.1003
  CLC： O484.4
- Received：31 March 2014，
  
  Revised：09 May 2014，
  
  Published：03 August 2014
- 稿件说明：
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程浩, 侯延冰, 秦亮等. F8BT：P3HT共混薄膜的放大自发辐射[J]. 发光学报, 2014,35(8): 1003-1008

CHENG Hao, HOU Yan-bing, QIN Liang etc. Amplified Spontaneous Emission from The Blend Films of F8BT and P3HT[J]. Chinese Journal of Luminescence, 2014,35(8): 1003-1008
程浩, 侯延冰, 秦亮等. F8BT：P3HT共混薄膜的放大自发辐射[J]. 发光学报, 2014,35(8): 1003-1008 DOI： 10.3788/fgxb20143508.1003.

CHENG Hao, HOU Yan-bing, QIN Liang etc. Amplified Spontaneous Emission from The Blend Films of F8BT and P3HT[J]. Chinese Journal of Luminescence, 2014,35(8): 1003-1008 DOI： 10.3788/fgxb20143508.1003.

摘要

研究了聚合物poly（9，9-dioctylfluorene-co-benzothiadiazole）（F8BT）和poly （3-hexylthiophene）（P3HT）共混薄膜的放大自发辐射（ASE）现象，对影响其阈值的两个因素增益和损耗进行了详细的研究。结果显示，共混聚合物的发光效率随着P3HT所占比例的增加有所降低。当P3HT比例低于20%时，发光效率降低不多，而其损耗则随着P3HT的增加显著减小。F8BT和P3HT混合后，光损耗系数从7.8 cm

-1

下降到4 cm

-1

左右。这表明F8BT：P3HT共混聚合物光波导的ASE阈值降低主要是由于其损耗的降低而导致的。ASE阈值的降低预示该材料体系容易实现电泵浦激光。

Abstract

The amplified spontaneous emission (ASE) of the blend waveguide based on poly (9

9-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly (3-hexylthiophene) (P3HT) was studied

and the gain and loss of the blend waveguides were discussed in detail. The photoluminescence quantum efficiency (PLQE) of F8BT:P3HT blend decreases with the increasing of P3HT fraction. When the P3HT fraction is less than 20%

PLQE of blends decreases slightly. Meanwhile

the loss coefficient decreases from 7.8 cm

-1

for F8BT waveguide to 4 cm

-1

for the waveguide based on the blend of F8BT and P3HT. So the decrease of ASE threshold of blend waveguides is resulted from the reduction of loss of the blend film waveguides. The decrease of ASE threshold would be benefit to the realization of electrically driven laser in waveguide based on the blend of F8BT and P3HT.

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references

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