Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions

ZHAI Jian-bo; HUANG Hai-bei; LI Su-mei; CONG Wei-yan; ZHENG Wei-min

doi:10.3788/fgxb20143508.0986

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Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions

更新时间：2020-08-12

- Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions
- Chinese Journal of Luminescence Vol. 35, Issue 8, Pages: 986-991(2014)
- 作者机构：
  
  1. 山东大学（威海）空间科学与物理学院,山东威海,264209
  2. 山东大学（威海）机电与信息工程学院,山东威海,264209
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143508.0986
  CLC： TN215
- Received：09 April 2014，
  
  Revised：25 May 2014，
  
  Published：03 August 2014
- 稿件说明：
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翟剑波, 黄海北, 李素梅等. 基于量子限制的受主带间跃迁太赫兹探测器的制备与测量[J]. 发光学报, 2014,35(8): 986-991

ZHAI Jian-bo, HUANG Hai-bei, LI Su-mei etc. Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions[J]. Chinese Journal of Luminescence, 2014,35(8): 986-991
翟剑波, 黄海北, 李素梅等. 基于量子限制的受主带间跃迁太赫兹探测器的制备与测量[J]. 发光学报, 2014,35(8): 986-991 DOI： 10.3788/fgxb20143508.0986.

ZHAI Jian-bo, HUANG Hai-bei, LI Su-mei etc. Preparation and Measurement of Terahertz Photodetectors Based on Quantum-confined Acceptor Transitions[J]. Chinese Journal of Luminescence, 2014,35(8): 986-991 DOI： 10.3788/fgxb20143508.0986.

摘要

使用分子束外延生长设备，在GaAs（100）衬底上生长了量子阱宽度为3 nm的GaAs/AlAs多量子阱样品，并在量子阱层中央进行了Be受主的-掺杂。根据量子限制受主从束缚态到非束缚态之间的跃迁，设计并制备了-掺杂Be受主GaAs/AlAs多量子阱太赫兹光探测器原型器件。在4.2 K温度下，分别对器件进行了太赫兹光电流谱和暗电流-电压曲线的测量。在6 V直流偏压下，空穴载流子沿量子阱层方向输运。当正入射激光频率为6.8 THz时，器件响应率为210

-4

V/W（2 A/W）。通过器件的暗电流-电压曲线计算了器件全散粒噪声电流，在4.2 K、6 V直流偏压下，全散粒噪声电流为5.03 fAHz

-1/2

。

Abstract

3 nm well-width GaAs/AlAs multiple-quantum wells were grown by molecular beam epitaxy with Be acceptors -doped at quantum-well center on a semi-insulating GaAs (100) substrate. According to the transitions from bound to unbound states of quantum-confined acceptors

the terahertz prototype photodetector based Be acceptors-doped GaAs/AlAs multiple-quantum wells was designed and fabricated. The terahertz photocurrent spectrum and dark current-voltage characteristics of the device were measured at 4.2 K

respectively. Under a bias of 6 V and the normal incidence of a 6.8 THz laser

the hole carriers transport along quantum well layers

and the photodetector responsivity is 210

-4

V/W (2 A/W). According to the

I-V

curves measured at 4.2 K

the device full-shot noise current was calculated. It is 5.03 fAHz

-1/2

with a bias of 6 V.

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Keywords

references

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Related Institution

山东大学(威海) 空间科学与物理学院

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山东大学(威海) 机电与信息工程学院

中国科学院上海技术物理研究所

济南市半导体元件实验所

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