Resistance Switching Mechanism of Bistable Memory Device Based on ZnO/PVP Modified by PbS Nanocrystal

SHI Qing-liang; XU Jian-ping; WANG Xue-liang; WANG You-wei; JIANG Li-fang; ZHU Ming-xue; H

doi:10.3788/fgxb20143507.0846

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Resistance Switching Mechanism of Bistable Memory Device Based on ZnO/PVP Modified by PbS Nanocrystal

更新时间：2020-08-12

- Resistance Switching Mechanism of Bistable Memory Device Based on ZnO/PVP Modified by PbS Nanocrystal
- Chinese Journal of Luminescence Vol. 35, Issue 7, Pages: 846-852(2014)
- 作者机构：
  
  天津理工大学材料物理研究所, 光电器件与显示材料教育部重点实验室天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143507.0846
  CLC： O469;O472+.4
- Received：02 April 2014，
  
  Revised：17 April 2014，
  
  Published Online：09 May 2014，
  
  Published：03 July 2014
- 稿件说明：
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石庆良, 徐建萍, 王雪亮等. PbS纳米晶修饰的ZnO/PVP复合电双稳器件阻变机制[J]. 发光学报, 2014,35(7): 846-852

SHI Qing-liang, XU Jian-ping, WANG Xue-liang etc. Resistance Switching Mechanism of Bistable Memory Device Based on ZnO/PVP Modified by PbS Nanocrystal[J]. Chinese Journal of Luminescence, 2014,35(7): 846-852
石庆良, 徐建萍, 王雪亮等. PbS纳米晶修饰的ZnO/PVP复合电双稳器件阻变机制[J]. 发光学报, 2014,35(7): 846-852 DOI： 10.3788/fgxb20143507.0846.

SHI Qing-liang, XU Jian-ping, WANG Xue-liang etc. Resistance Switching Mechanism of Bistable Memory Device Based on ZnO/PVP Modified by PbS Nanocrystal[J]. Chinese Journal of Luminescence, 2014,35(7): 846-852 DOI： 10.3788/fgxb20143507.0846.

摘要

采用简单旋涂工艺制备了具有ITO/PVP/ZnO NCs/PbS NCs/PVP/Al 夹心结构的有机/无机复合电双稳存储器件，与没有PbS纳米晶修饰层的器件ITO/PVP/ZnO NCs/PVP/Al相比，PbS纳米晶的引入使目标器件的开关比提高了2个数量级。结合器件的

I-V

曲线和能级结构分析了PbS 纳米晶修饰层对器件阻变和载流子传输的影响。结果显示，PbS纳米晶层的加入不仅优化了器件能级结构，有利于载流子的俘获和释放，还修饰了ZnO纳米晶的表面缺陷，降低了器件载流子的复合损耗。

Abstract

An organic/inorganic composite electrical bistable device with the sandwich structure of ITO/PVP/ZnO nanocrystal (NCs)/PbS nanocrystal (NCs)/PVP/Al was fabricated. Compared with the device structure of ITO/PVP/ZnO NPs/PVP/Al

the ON/OFF ratio of target device was improved by 2 orders of magnitude. The carrier transportation and resistance switching mechanism of device were discussed

via I-V

characteristics and the energy band structures of the devices. The effective capture/release of electrons could be attributed to the optimization of device structure and modification of ZnO NCs surface by PbS NCs layer.

关键词

Keywords

references

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