Thermal Analysis of AlGaInP-LED Mircro-cells

TIAN Chao; LIANG Jing-qiu; LIANG Zhong-zhu; QIN Yu-xin; Li Chun; LYU Jin-guang; WANG Wei-b

doi:10.3788/fgxb20143507.0840

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Thermal Analysis of AlGaInP-LED Mircro-cells

更新时间：2020-08-12

- Thermal Analysis of AlGaInP-LED Mircro-cells
- Chinese Journal of Luminescence Vol. 35, Issue 7, Pages: 840-845(2014)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春,130022
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143507.0840
  CLC： TN312.8
- Received：12 March 2014，
  
  Revised：03 April 2014，
  
  Published：03 July 2014
- 稿件说明：
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田超, 梁静秋, 梁中翥等. AlGaInP-LED微阵列单元的热效应分析[J]. 发光学报, 2014,35(7): 840-845

TIAN Chao, LIANG Jing-qiu, LIANG Zhong-zhu etc. Thermal Analysis of AlGaInP-LED Mircro-cells[J]. Chinese Journal of Luminescence, 2014,35(7): 840-845
田超, 梁静秋, 梁中翥等. AlGaInP-LED微阵列单元的热效应分析[J]. 发光学报, 2014,35(7): 840-845 DOI： 10.3788/fgxb20143507.0840.

TIAN Chao, LIANG Jing-qiu, LIANG Zhong-zhu etc. Thermal Analysis of AlGaInP-LED Mircro-cells[J]. Chinese Journal of Luminescence, 2014,35(7): 840-845 DOI： 10.3788/fgxb20143507.0840.

摘要

对AlGaInP-LED微型阵列发光单元的内部自发热机制进行了分析，并通过对具有回型上电极的发光单元的理论分析与计算，得到了其内量子效率与注入电流的变化关系及器件温度与所加偏压的变化关系。为保证内量子效率取值范围大于85%，得到了器件的最佳工作电流和最佳驱动电压范围以及微阵列各层结构在最佳驱动电压下的热阻分布。通过计算得出器件在2.2 V电压下，从p-n结到外部环境的有效热阻为96.7 ℃/W。讨论了减小器件热阻的方法，计算得出在理想情况下，添加热沉结构后有效热阻降为30.6 ℃/W，表明所设计的热沉结构对器件的散热起到了明显的改善作用。

Abstract

The principle of self-heating effect of AlGaInP micro-LED cells was analyzed. By analyzing the temperature distribution of each cell with square-circle electrode

the relationships of the internal quantum efficiency

vs.

anode current and the lattice device temperature

vs.

anode voltage were got. Under 2.2 V driving voltage

the thermal impedance of each layer was calculated and the effective thermal impedance was obtained as 96.7 ℃/W. After adding heat-sink to the device

the thermal impedance of the device with heat-sink structure was as low as 30.6 ℃/W in ideal condition. The results show that the thermal performance can be improved obviously with the designed heat-sink structure.

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Keywords

references

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Related Institution

State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

University of Chinese Academy of Sciences, Beijing 100049, China

State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science

University of Chinese Academy of Science

Institute of Opto-electronic Materials and Technology, South China Normal University

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