Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials

ZHONG Lin-jian; XING Yan-hui; HAN Jun; CHEN Xiang; ZHU Qi-fa; FAN Ya-ming; DENG Xu-guang; Z

doi:10.3788/fgxb20143507.0830

您当前的位置：

首页 >

文章列表页 >

Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials

更新时间：2020-08-12

- Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials
- Chinese Journal of Luminescence Vol. 35, Issue 7, Pages: 830-834(2014)
- 作者机构：
  
  1. 北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室北京,100124
  2. 中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州,215123
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143507.0830
  CLC： O484
- Received：21 March 2014，
  
  Revised：11 May 2014，
  
  Published Online：09 May 2014，
  
  Published：03 July 2014
- 稿件说明：
移动端阅览
钟林健, 邢艳辉, 韩军等. AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响[J]. 发光学报, 2014,35(7): 830-834

ZHONG Lin-jian, XING Yan-hui, HAN Jun etc. Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials[J]. Chinese Journal of Luminescence, 2014,35(7): 830-834
钟林健, 邢艳辉, 韩军等. AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响[J]. 发光学报, 2014,35(7): 830-834 DOI： 10.3788/fgxb20143507.0830.

ZHONG Lin-jian, XING Yan-hui, HAN Jun etc. Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials[J]. Chinese Journal of Luminescence, 2014,35(7): 830-834 DOI： 10.3788/fgxb20143507.0830.

摘要

利用金属有机化学气相沉积（MOCVD）设备，在蓝宝石（0001）面上外延不同生长时间AlN隔离层的Al

N/AlN/GaN结构的高电子迁移率的晶体管（HEMT），研究了AlN隔离层厚度对HEMT材料电学性能的影响。研究发现采用脉冲法外延（PALE）技术生长AlN隔离层的时间为12 s（1 nm左右）时，HEMT材料的方块电阻最小，电子迁移率为1 500 cm

-1

，二维电子气（2DEG）浓度为1.1610

-2

。AFM测试结果表明，一定厚度范围内的AlN隔离层并不会对材料的表面形貌产生重大的影响。HRXRD测试结果表明，AlGaN/AlN/GaN具有好的异质结界面。

Abstract

AlGaN/AlN/GaN HEMT structures were grown on sapphire substrate by MOCVD with different AlN growing time

and the influence of AlN thickness on electrical properties was investigated. When AlN growth time is about 12 s corresponding to the AlN thickness of 1~1.5 nm

the sample has the best performance of electrical properties with the lowest sheet resistance of 359 sq

-1

the highest 2DEG concentration of 1.1610

-2

and a high 2DEG mobility of

500 cm

-1

. AFM results indicate that AlN layer within a certain thickness range has little influence on the surface morphology. HRXRD results show that AlGaN/AlN/GaN HEMT has a good heterostructure interface.

关键词

Keywords

references

Wang C M, Wang X L, Hu G X, et al. Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure [J]. Appl. Surf. Sci., 2006, 253(2):762-765.

Wang C M, Wang X L, Hu G X, et al. The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures [J]. J. Cryst. Growth, 2006, 289(2):415-418.

Chen X, Xing Y H, Han J, et al. Influence of AlN interfacial layer on electrical properties of AlGaN/AlN/GaN HEMT materials grown by MOCVD [J]. Chin. J. Lasers (中国激光), 2013, 40(6):0606005-1-5 (in Chinese).

Xue J S, Hao Y, Zhang J C, et al. Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers [J]. Sci. China (中国科学), 2010, 53(6):1567-1571 (in Chinese).

Ding G J, Guo L W, Xing Z G, et al. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire [J]. Sci. China (中国科学), 2010, 53(1):49-53 (in Chinese).

Wang X L, Hu G X, Wang C M, et al. MOCVD grown high-mobility AlGaN/AlN/GaN HEMT structure on sapphire substrate [J]. J. Cryst. Growth, 2007, 298(1):791-793.

Dimitrov R, Murphy M, Smart J, et al. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire [J]. J. Appl. Phys., 2000, 87(7):3375-3380.

Baishakhi M, Kaun S W, Lu J, et al. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures [J]. Appl. Phys. Lett., 2013, 102(11):111603-1-5.

Kawakami Y, Shimizu M, Nakanishi H, et al. Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers [J]. J. Cryst. Growth, 2007, 300(1):168-171.

Kawakami Y, Shimizu M, Nakanishi H, et al. Improved electrical properties in AlGaN/GaN heterostructures using AlN/GaN superlattice as a quasi-AlGaN barrier [J]. Appl. Phys. Lett., 2007, 90(24):242112-1-3.

Smorchkova I P, Chen L, Mates T, et al. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy [J]. J. Appl. Phys., 2001, 90(10):5196-5201.

Balme R S, Hilton K P, Nash K J, et al. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer [J]. Phys. Stat. Sol.(c), 2003(7):2331-2334.

Wu Y F, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization [J]. IEEE Electron Dev. Lett., 2004, 25(3):117-119.

Views

325

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells

Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots

Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED

Research on Heating Uniformity of MOCVD Heating Device

Related Author

LU Hong-bo

LI Ge

LI Xin-yi

ZHANG Wei

HU Shu-hong

DAI Ning

XU De-qian

XU Jia-xin

Related Institution

University of Chinese Academy of Sciences

Shanghai Institute of Space Power-sources

Shanghai Institute of Technology Physics, Chinese Academy of Sciences

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰