Effects of N2 Flux Ratio on The Structure and Properties of MgZnO：N Films

GAO Li-li; LI Yong-feng; XU Ying; ZHANG Miao; YAO Bin

doi:10.3788/fgxb20143506.0689

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Effects of N₂ Flux Ratio on The Structure and Properties of MgZnO：N Films

更新时间：2020-08-12

- Effects of N₂ Flux Ratio on The Structure and Properties of MgZnO：N Films
- Chinese Journal of Luminescence Vol. 35, Issue 6, Pages: 689-694(2014)
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 北华大学物理学院,吉林吉林,132013
- 作者简介：
- 基金信息：
  
  T Development Plan Project of China (20160414043GH)
- DOI：10.3788/fgxb20143506.0689
  CLC： O472;O484.4
- Received：26 February 2014，
  
  Revised：12 April 2014，
  
  Published：03 June 2014
- 稿件说明：
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高丽丽, 李永峰, 徐莹等. N2流量对N掺杂MgZnO薄膜结构和性能的影响[J]. 发光学报, 2014,35(6): 689-694

GAO Li-li, LI Yong-feng, XU Ying etc. Effects of N2 Flux Ratio on The Structure and Properties of MgZnO：N Films[J]. Chinese Journal of Luminescence, 2014,35(6): 689-694
高丽丽, 李永峰, 徐莹等. N2流量对N掺杂MgZnO薄膜结构和性能的影响[J]. 发光学报, 2014,35(6): 689-694 DOI： 10.3788/fgxb20143506.0689.

GAO Li-li, LI Yong-feng, XU Ying etc. Effects of N2 Flux Ratio on The Structure and Properties of MgZnO：N Films[J]. Chinese Journal of Luminescence, 2014,35(6): 689-694 DOI： 10.3788/fgxb20143506.0689.

摘要

利用射频磁控溅射方法，使用Mg

0. 04

0.96

O 陶瓷靶材，选用不同流量比的氮气和氩气混和气体作为溅射气体，在石英基片上生长N掺杂Mg

O合金薄膜。研究了氮流量比对薄膜组分、结构、形貌、电学性质和拉曼光谱的影响。结果显示：随着溅射气氛中氮流量比的增加，薄膜中Mg含量增加，薄膜表面颗粒尺寸减小，结晶质量变差，电阻率逐渐增大，导电类型发生转变。在氮流量比为20%时，获得了最好的p型导电薄膜。另外，随着氮流量比的增加，拉曼光谱中与N

Abstract

Using Mg

0.04

0.96

O target

N doped MgZnO films were prepared on quartz substrate by radio frequency magnetron sputtering technique. The effects of N

/(N

+Ar) flux ratio on the morphology

structure and properties of annealed MgZnO thin films were investigated. With the increasing flux ratio of N

/(N

+Ar)

the content of Mg increases

the average grain size becomes smaller

the crystal quality degrades

the resistivity increases

and the conductivity of the film changes. When the flux ratio of N

/(N

+Ar) is 20%

the MgZnO:N film behaves the best p-type conductivity property. Furthermore

the Raman peaks of the N for O site (N

) at 272 and 642 cm

-1

become stronger with the flux ratio of N

/(N

+Ar) increasing. It can be concluded that the doping concentration of N for O site (N

) increases with the flux ratio of N

/(N

+Ar) increasing.

关键词

Keywords

references

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