Growth Orientation and Optical Absorption Characteristics of Cubic MgZnO Thin Films Under Different Ar/O2 Pressure Ratio Condition by PLD Method

HAN Shun; PENG Sai; CAO Pei-jiang; LIU Wen-jun; ZENG Yu-xiang; JIA Fang; ZHU De-liang; LYU

doi:10.3788/fgxb20143506.0684

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Growth Orientation and Optical Absorption Characteristics of Cubic MgZnO Thin Films Under Different Ar/O₂ Pressure Ratio Condition by PLD Method

更新时间：2020-08-12

- Growth Orientation and Optical Absorption Characteristics of Cubic MgZnO Thin Films Under Different Ar/O₂ Pressure Ratio Condition by PLD Method
- Chinese Journal of Luminescence Vol. 35, Issue 6, Pages: 684-688(2014)
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室, 深圳陶瓷先进技术工程实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143506.0684
  CLC： O484.4
- Received：01 March 2014，
  
  Revised：31 March 2014，
  
  Published：03 June 2014
- 稿件说明：
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韩舜, 彭赛, 曹培江等. 不同Ar/O2气压比例条件下立方MgZnO薄膜生长特性及紫外光吸收特性[J]. 发光学报, 2014,35(6): 684-688

HAN Shun, PENG Sai, CAO Pei-jiang etc. Growth Orientation and Optical Absorption Characteristics of Cubic MgZnO Thin Films Under Different Ar/O2 Pressure Ratio Condition by PLD Method[J]. Chinese Journal of Luminescence, 2014,35(6): 684-688
韩舜, 彭赛, 曹培江等. 不同Ar/O2气压比例条件下立方MgZnO薄膜生长特性及紫外光吸收特性[J]. 发光学报, 2014,35(6): 684-688 DOI： 10.3788/fgxb20143506.0684.

HAN Shun, PENG Sai, CAO Pei-jiang etc. Growth Orientation and Optical Absorption Characteristics of Cubic MgZnO Thin Films Under Different Ar/O2 Pressure Ratio Condition by PLD Method[J]. Chinese Journal of Luminescence, 2014,35(6): 684-688 DOI： 10.3788/fgxb20143506.0684.

摘要

利用脉冲激光沉积技术在非晶石英衬底上制备了立方结构MgZnO薄膜，研究了在不同Ar/O

气压比例条件下，立方结构MgZnO薄膜的生长取向、光学带隙和Mg/Zn含量比例的变化规律。当固定氧气分压为2 Pa、通过注入惰性的Ar气使生长气压从2 Pa升高到7 Pa时，MgZnO薄膜的生长取向由（200）向（111）转变。当生长气压从2 Pa升高到6 Pa时，MgZnO薄膜光学带隙变窄。而当生长气压从6 Pa升高到7 Pa时，MgZnO薄膜光学带隙反而变宽。通过XPS数据分析，不同生长气压下MgZnO薄膜光学带隙的变化规律与薄膜Mg/Zn含量比例的变化规律不一致，MgZnO薄膜中Mg和Zn与O的结合情况的变化对薄膜的光学带隙也有影响。

Abstract

O thin films were deposited by pulsed laser deposition method. When growth pressure increased through inducing inert Ar during growth process

the migration energy of reactive Mg

Zn and O atoms decreased

the growth orientation of MgZnO thin film shifted from (200) to (111). The band gap value of MgZnO thin films changed with the contents of Mg and Zn atoms that combined with O atoms in MgZnO crystal lattice at different pressure

but not changed with the Mg and Zn content of the whole MgZnO thin films as reported results.

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references

Jaffe J E, Hess A C. Hartree-Fock study of phase changes in ZnO at high pressure [J]. Phys. Rev. B, 1993, 48(11-15):7903-7909.

Yang W, Hullavarad S S, Nagaraj B, et al. Composition nally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors [J]. Appl. Phys. Lett., 2003, 82(20):3424-3426.

Yang W, Vispute R D, Choopun S, et al. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films [J]. Appl. Phys. Lett., 2001, 78(18):2787-2789.

Ju Z G, Shan C X, Jiang D Y, et al. MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range [J]. Appl. Phys. Lett., 2008, 93(17):173505-1-3.

Ju Z G, Shan C X, Yang C L, et al. Phase stability of cubic Mg0.55Zn0.45O thin film studied by continuous thermal annealing method [J]. Appl. Phys. Lett., 2009, 94(10):101902-1-3.

Wang L K, Ju Z G, Zhang J Y, et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [J]. Appl. Phys. Lett., 2009, 95(13):131113-1-3.

Han S, Zhang J Y, Zhang Z Z, et al. Mg0.58Zn0.42O thin films on MgO substrates with MgO buffer layer [J]. ACS Appl. Mater. Interf., 2010, 2:1918-1921.

Han S, Zhang Z Z, Zhang J Y, et al. Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film [J]. Appl. Phys. Lett., 2011, 99(24):242105-1-3.

Chen X Y, Wong K H, Mak C L, et al. Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100)by pulsed laser deposition [J]. Appl. Phys. Lett., 2002, 91(9):5728-5730.

Huang R, Kitai A H. Temperature dependence of the growth orientation of atomic layer growth MgO [J]. Appl. Phys. Lett., 1992, 61(12):1450-1452.

Ning M, Mi Y Y, Ong C K, et al. Growth studies of (220), (200) and (111) oriented MgO films on Si(001) without buffer layer [J]. J. Phys. D: Appl. Phys., 2007, 40(12):3678-3682.

Renaultaz O, Labeau M. Strong <200> and <111> preferred orientations of MgO thin films synthesized on amorphous substrate by aerosol assisted-metal organic chemical vapor deposition [J]. J. Electrochem. Soc., 1999, 146(10):3731-3735.

Chen X Y, Wong K H, Mak C L, et al. Orientation selective growth of MgO films on Si (100) by pulsed laser deposition [J]. Appl. Phys. A, 2002, 74(5):703-706.

Han S, Shao Y K, Lu Y M, et al. Effect of oxygen pressure on preferred deposition orientations and optical properties of cubic MgZnO thin films on amorphous quartz substrate [J]. J. Alloys Compd., 2013, 559:209-213.

Ardizzone S, Bianchi C L, Fadoni M, et al. Magnesium salts and oxide: An XPS overview [J]. Appl. Surface Sci., 1997, 119(3-4):253-259.

Chen J, Shen W Z, Chen N B, et al. The study of composition non-uniformity in ternary MgxZn1-xO thin films [J]. Phys. Condens. Matter, 2003, 15:L475-L482.

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Related Author

PENG Sai

LYU You-ming

HAN Shun

CAO Pei-jiang

LIU Wen-jun

ZENG Yu-xiang

JIA Fang

ZHU De-liang

Related Institution

College of Materials Science and Engineering, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials

Department of Physics, Xiamen University

School of Materials Science & Engineering， Hubei University

College of Intelligent Systems Science and Engineering， Hubei Minzu University

School of Materials Science and Engineering， Changchun University of Science and Technology

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