Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped eterostructure

TIAN Hai-tao; WANG Lu; WEN Cai; SHI Zhen-wu; SUN Qing-ling; GAO Huai-ju; WANG Wen-xin; CHEN

doi:10.3788/fgxb20143506.0637

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Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped eterostructure

更新时间：2020-08-12

- Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped eterostructure
- Chinese Journal of Luminescence Vol. 35, Issue 6, Pages: 637-642(2014)
- 作者机构：
  
  1. 中国科学院物理研究所北京凝聚态物理国家实验室北京,100190
  2. 天津工业大学电气工程与自动化学院天津,300387
  3. 西南科技大学理学院极端条件物质特性实验室,四川绵阳,621010
- 作者简介：
- 基金信息：
  
  863"973"
- DOI：10.3788/fgxb20143506.0637
  CLC： TN304
- Received：24 February 2014，
  
  Revised：30 March 2014，
  
  Published：03 June 2014
- 稿件说明：
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田海涛, 王禄, 温才等. InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响[J]. 发光学报, 2014,35(6): 637-642

TIAN Hai-tao, WANG Lu, WEN Cai etc. Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped eterostructure[J]. Chinese Journal of Luminescence, 2014,35(6): 637-642
田海涛, 王禄, 温才等. InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响[J]. 发光学报, 2014,35(6): 637-642 DOI： 10.3788/fgxb20143506.0637.

TIAN Hai-tao, WANG Lu, WEN Cai etc. Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped eterostructure[J]. Chinese Journal of Luminescence, 2014,35(6): 637-642 DOI： 10.3788/fgxb20143506.0637.

摘要

系统研究了在调制掺杂AlGaAs/GaAs异质结中嵌入InAs量子点后对二维电子气输运特性的影响。使用分子束外延设备生长了量子点层与二维电子气沟道距离（

）不同的3个样品，霍尔测试结果表明，二维电子气的电子迁移率和载流子浓度都随

的减小而降低。基于几何相位分析算法对部分样品的高分辨透射电镜图像进行了处理，得到了其应变分布图。结果表明，应变主要分布在量子点的周围，并延伸到了量子点的上方。该不均匀的应力场可能是除库伦散射外影响电子迁移率降低的另一个重要因素。

Abstract

Effect of embedding InAs quantum dots (QDs) on the transport properties of two-dimensional gas (2-DEG) in a modulation-doped AlGaAs/GaAs heterostructure was investigated. Samples with difference thickness (

) from QDs layer to 2-DEG were prepared using molecular beam epitaxy. Hall measurements show that the mobility drops dramatically with the decrease of

and the electron concentration shows a same trend. Strain distributions have been measured by means of geometric phase analysis of the high-resolution transmission electron microscope images. The results show that the strain is focused in the edges and above of InAs QDs which are resulted from the extended lattice distortion. And the non-uniform strain field could be another key factor for the drop of the mobility besides coulomb scattering.

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references

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