Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO

HU Jin-yong; HUANG Hua-mao; WANG Hong; HU Xiao-long

doi:10.3788/fgxb20143505.0613

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Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO

更新时间：2020-08-12

- Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO
- Chinese Journal of Luminescence Vol. 35, Issue 5, Pages: 613-617(2014)
- 作者机构：
  
  华南理工大学理学院物理系广东省光电工程技术研究开发中心,广东广州,510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143505.0613
  CLC： TN304.2+3
- Received：31 December 2013，
  
  Revised：14 March 2014，
  
  Published：03 May 2014
- 稿件说明：
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胡金勇, 黄华茂, 王洪等. ITO表面粗化提高GaN基LED芯片出光效率[J]. 发光学报, 2014,35(5): 613-617

HU Jin-yong, HUANG Hua-mao, WANG Hong etc. Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO[J]. Chinese Journal of Luminescence, 2014,35(5): 613-617
胡金勇, 黄华茂, 王洪等. ITO表面粗化提高GaN基LED芯片出光效率[J]. 发光学报, 2014,35(5): 613-617 DOI： 10.3788/fgxb20143505.0613.

HU Jin-yong, HUANG Hua-mao, WANG Hong etc. Light-output Enhancement of GaN-based Light-emitting Diodes with Surface Textured ITO[J]. Chinese Journal of Luminescence, 2014,35(5): 613-617 DOI： 10.3788/fgxb20143505.0613.

摘要

使用现有生产线上工艺成熟且成本低廉的技术实现ITO粗化以提高GaN基LED蓝光芯片的出光效率是产业界重要的研究课题。本文通过普通光刻技术和湿法腐蚀技术，实现ITO表面粗化，有效地提高了LED芯片的输出光功率。输入电流为20 mA时，ITO层制备密集分布的三角周期圆孔阵列后，芯片输出光功率提升11.4%，但正向电压升高0.178 V；微结构优化设计后，芯片输出光功率提升8.2%，正向电压仅升高0.044 V。小电流注入时，密集分布的三角周期圆孔阵列有利于获得较高的输出光功率。大电流注入时，这种结构将导致电流拥挤，芯片的电光转化效率衰减严重。经过优化设计后的微结构阵列器件，具有较高的电注入效率，因此芯片的出光效率较高且随输入电流的增加而衰减的趋势较慢，因此更适合大电流下工作。

Abstract

The sophisticated techniques of photolithography and wet-etching are used to fabricate GaN-based LED chips with surface-textured ITO layer to enhance the light output efficiency. It is shown that the light-output power can be efficiently improved by this surface-textured method. After the triangle-lattice of close-packed micro-holes are fabricated

the light-output power of LED chips under the injection current of 20 mA exhibits 11.4% enhancement comparing to the conventional LED chips. However

the forward voltage correspondingly increases 0.178 V. With our proposed micro-structures

the light-output power can also be enhanced by 8.2%

while the forward voltage increases only 0.044 V. It is also shown that the close-packed micro-hole pattern benefits high light-output under small injection current. However

this pattern would induce current-crowding if the injection current become high

and thus the light-output efficiency would decrease significantly. On the other hand

our optimized micro-structure is help for high electric-injection efficiency. This induces a high light-output efficiency

and the efficiency droop can be suppressed. The proposed micro-structure is preferred for high power LED chips under large current injection.

关键词

Keywords

references

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