Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures

GU Hai-jia; TANG Xin-yue; YANG Shou-bin

doi:10.3788/fgxb20143505.0600

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Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures

更新时间：2020-08-12

- Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures
- Chinese Journal of Luminescence Vol. 35, Issue 5, Pages: 600-603(2014)
- 作者机构：
  
  哈尔滨师范大学物理与电子工程学院,黑龙江哈尔滨,150025
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143505.0600
  CLC： O484.4
- Received：31 December 2013，
  
  Revised：23 January 2014，
  
  Published Online：07 March 2014，
  
  Published：03 May 2014
- 稿件说明：
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顾海佳, 唐欣月, 杨守斌. 单根ZnO纳米线低温条件下的电子输运及光敏性质[J]. 发光学报, 2014,35(5): 600-603

GU Hai-jia, TANG Xin-yue, YANG Shou-bin. Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures[J]. Chinese Journal of Luminescence, 2014,35(5): 600-603
顾海佳, 唐欣月, 杨守斌. 单根ZnO纳米线低温条件下的电子输运及光敏性质[J]. 发光学报, 2014,35(5): 600-603 DOI： 10.3788/fgxb20143505.0600.

GU Hai-jia, TANG Xin-yue, YANG Shou-bin. Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures[J]. Chinese Journal of Luminescence, 2014,35(5): 600-603 DOI： 10.3788/fgxb20143505.0600.

摘要

用化学气相沉积的方法合成了ZnO纳米线，采用微栅模板法制得电极从而获得欧姆接触的单根ZnO纳米线半导体器件。通过研究60~300 K范围内的电阻变化情况，发现在整个温度区间内存在热激活和近程跳跃两种传输机制。在300，200，100 K的条件下分别测试了器件的紫外光响应和恢复情况，结果表明：低温下器件对紫外光的敏感性提高，电流的恢复时间随着温度的降低而延长。

Abstract

ZnO nanowires were synthesized by chemical vapor deposition method

and single ZnO nanowire semiconductor devices with Ohmic contact electrodes were fabricated using the micro grid template method. The electrical properties of the device were investigated at low temperatures. The results show that there are two types of transport mechanism: thermal activation and nearest-neighbor hopping mechanism from 300 to 60 K. The properties of ultraviolet light response and recovery of the device were tested at 300

200

and 100 K

respectively. The results show that the sensitivity of the device to ultraviolet is improved at low temperature

and the current recovery time increases with the temperature falling down.

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references

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