Photoluminescence and Synthesis of GaN Nanoparticles

SHEN Long-hai; FU Song; SHI Guang-li

doi:10.3788/fgxb20143505.0585

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Photoluminescence and Synthesis of GaN Nanoparticles

更新时间：2020-08-12

- Photoluminescence and Synthesis of GaN Nanoparticles
- Chinese Journal of Luminescence Vol. 35, Issue 5, Pages: 585-588(2014)
- 作者机构：
  
  沈阳理工大学理学院,辽宁沈阳,110159
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143505.0585
  CLC： O471.4;O482.31
- Received：28 January 2014，
  
  Revised：22 February 2014，
  
  Published：03 May 2014
- 稿件说明：
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沈龙海, 富松, 石广立. 氮化镓纳米粒子的制备及光致发光研究[J]. 发光学报, 2014,35(5): 585-588

SHEN Long-hai, FU Song, SHI Guang-li. Photoluminescence and Synthesis of GaN Nanoparticles[J]. Chinese Journal of Luminescence, 2014,35(5): 585-588
沈龙海, 富松, 石广立. 氮化镓纳米粒子的制备及光致发光研究[J]. 发光学报, 2014,35(5): 585-588 DOI： 10.3788/fgxb20143505.0585.

SHEN Long-hai, FU Song, SHI Guang-li. Photoluminescence and Synthesis of GaN Nanoparticles[J]. Chinese Journal of Luminescence, 2014,35(5): 585-588 DOI： 10.3788/fgxb20143505.0585.

摘要

采用直接氮化法制备出尺寸不同的GaN纳米粒子，分别利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和光致发光（PL）谱测试手段对所制样品进行表征和发光特性的研究。结果表明：所制备的两种GaN纳米粒子直径分别为100 nm和300 nm左右。在GaN纳米粒子的PL谱中，中心在357 nm的发射源于本征发光，中心在385 nm的发射带源于浅施主能级到价带的辐射复合，中心在560 nm左右的发射带源于浅施主能级到深受主能级间的施主-受主对辐射发光。

Abstract

GaN nanoparticles with different sizes were prepared by direct nitridation method. The structure

morphology and optical property of the synthesized samples were characterized by XRD

SEM and PL spectra. The diameters of two kinds of GaN nanoparticles are around 100 nm and 300 nm

respectively. The emission at 357 nm can be ascribed to the band-edge emission. The emission band at 385 nm can be ascribed to the radiation recombination from shallow donor level of nitrogen vacancy (V

) to valence band. The emission band at around 560 nm can be ascribed to the DAP (Donor-acceptor pair) transition from shallow donor level of nitrogen vacancy (V

) to deep acceptor level.

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references

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