WANG Hao, ZHAN Hua-han, CHEN Xiao-hang etc. Phase Segregation of ZnO/ZnMgO Superlattice Affected by Ⅱ-Ⅵ Ratio[J]. Chinese Journal of Luminescence, 2014,35(5): 526-530
WANG Hao, ZHAN Hua-han, CHEN Xiao-hang etc. Phase Segregation of ZnO/ZnMgO Superlattice Affected by Ⅱ-Ⅵ Ratio[J]. Chinese Journal of Luminescence, 2014,35(5): 526-530 DOI: 10.3788/fgxb20143505.0526.
Phase Segregation of ZnO/ZnMgO Superlattice Affected by Ⅱ-Ⅵ Ratio
ZnMgO alloy allows for tunable optoelectronic devices. However
the compositional range between ZnO and MgO is interrupted by a crystalline miscibility gap where the wurtzite crystal structure of ZnO is structurally incompatible with the rocksalt structure of MgO. In this article
ten periods of ZnO/ZnMgO superlattice were produced by plasma-assistant molecular beam epitaxy on
c
-plane sapphire substrate with different oxygen condition. It is found that the sample grown at lower oxygen flow and radio-frenquency (RF) plasma power tends to form rocksalt phase. With the increase of oxygen flow and RF plasma power
wurtzite phase tends to dominate and phase segregation is enhanced. The phase transform affected by the oxygen atoms density is reasoned by the formation enthalpies of ZnO and MgO.
关键词
Keywords
references
Koike K, Hama K, Nakashima I, et al. Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J].J. Cryst. Growth, 2005, 278(1-4):288-292.[2] Fujita S, Tanaka H, Fujita S. MBE growth of wide band gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions[J].J. Cryst. Growth, 2005, 278(1-4):264-267.[3] Tanaka H, Fujita S, Fujita S. Fabrication of wide-band-gap MgxZn1-xO quasi-ternary alloys by molecular-beam epitaxy[J].Appl. Phys. Lett., 2005, 86(19):192911-1-3.[4] Boutwell R C, Wei M, Schoenfeld W V. The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy[J].Appl. Phys. Lett., 2013, 103(3):031114-1-3.[5] Han S, Shao Y K, Lu Y M, et al. Effect of oxygen pressure on preferred deposition orientations and optical properties of cubic MgZnO thin films on amorphous quartz substrate[J].J. Alloys Compd., 2013, 559:209-213.[6] Jiang B, Zhang C, Jin C, et al. Kinetic-dynamic properties of different monomers and two-dimensional homoepitaxy growth on the Zn-polar (0001) ZnO surface[J].Cryst. Growth Des., 2012, 12(6):2850-2855.[7] Wagner C, Muilenberg G. Handbook of X-ray Photoelectron Spectroscopy [M]. Eden Prairie: Perkin Elmer, 1979:188.[8] Dutta R, Mandal N. Mg doping in wurtzite ZnO coupled with native point defects: A mechanism for enhanced n-type conductivity and photoluminescence[J].Appl. Phys. Lett., 2012, 101(4):042106-1-3.[9] Liu J, Shan C, Wang S, et al. Degenerated MgZnO films obtained by excessive zinc[J].J. Cryst. Growth, 2012, 347(1):95-98.
Growth Orientation and Optical Absorption Characteristics of Cubic MgZnO Thin Films Under Different Ar/O2 Pressure Ratio Condition by PLD Method
Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices
Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain
ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence
Fabrication and Characteristics of MgZnO Ultraviolet Detector Based on Ag Microporous Array Structure Electrode
Related Author
HAN Shun
PENG Sai
CAO Pei-jiang
LIU Wen-jun
ZENG Yu-xiang
JIA Fang
ZHU De-liang
LYU You-ming
Related Institution
College of Materials Science and Engineering, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics
Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences
School of Materials Science and Engineering, Changchun University of Science and Technology
Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education