Photoluminescence Properties of WSe2 Monolayer and Bilayer Nanosheets

DU Xiao-lei; LYU Yan-wu; JIANG Chao

doi:10.3788/fgxb20143505.0513

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Photoluminescence Properties of WSe₂ Monolayer and Bilayer Nanosheets

更新时间：2020-08-12

- Photoluminescence Properties of WSe₂ Monolayer and Bilayer Nanosheets
- Chinese Journal of Luminescence Vol. 35, Issue 5, Pages: 513-518(2014)
- 作者机构：
  
  1. 北京交通大学理学院北京,100044
  2. 国家纳米科学中心中国科学院纳米标准与检测重点实验室北京,100190
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143505.0513
  CLC： O482.31
- Received：07 November 2013，
  
  Revised：24 December 2013，
  
  Published Online：07 March 2014，
  
  Published：03 May 2014
- 稿件说明：
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杜晓雷, 吕燕伍, 江潮. 单层与双层WSe2纳米片层的光致发光[J]. 发光学报, 2014,35(5): 513-518

DU Xiao-lei, LYU Yan-wu, JIANG Chao. Photoluminescence Properties of WSe2 Monolayer and Bilayer Nanosheets[J]. Chinese Journal of Luminescence, 2014,35(5): 513-518
杜晓雷, 吕燕伍, 江潮. 单层与双层WSe2纳米片层的光致发光[J]. 发光学报, 2014,35(5): 513-518 DOI： 10.3788/fgxb20143505.0513.

DU Xiao-lei, LYU Yan-wu, JIANG Chao. Photoluminescence Properties of WSe2 Monolayer and Bilayer Nanosheets[J]. Chinese Journal of Luminescence, 2014,35(5): 513-518 DOI： 10.3788/fgxb20143505.0513.

摘要

采用气相沉积法制备了WSe

二维纳米材料，对其低温光致发光谱进行了研究。结果表明：随着WSe

层数的增加，其光致发光强度单调下降；当WSe

层数从单层增加为双层时，其发光强度急剧下降，表明其能带结构已从直接带隙转变为间接带隙。进一步研究了双层WSe

的变温光致发光谱，发现随着温度的升高，双层WSe

发光峰中A峰峰位的变化基本符合半导体带隙的温度变化规律，而I峰峰位红移与温度基本成线性关系，表明双层WSe

同时存在间接和直接跃迁，且直接跃迁和间接跃迁特性不同。

Abstract

We systematically studied the low-temperature (12 K) photoluminescence (PL) spectroscopies of WSe

nanosheets prepared by vapor deposition technique. It is found that PL intensity monotonically decreases with the increasing of WSe

nanosheet layers. In particular

the PL intensity dramatically decreased when the thickness of WSe

films changed from monolayer to bilayer

which indicated that there is a direct-to-indirect transition in the band gap of WSe

nanosheets. Then we focused on the variable temperature photoluminescence of the bilayer structure. When the temperature increases from 12 K to 300 K

the temperature-dependent evolution of the direct transition energy (peak A) is approximately consistent with the common formula obeyed by bulk semiconductors

while the indirect transition energy (peak I) can only be described by a linear relationship with temperature. This indicates that peak A and peak I have different transition characteristics and these two transition characteristics coexist in bilayer WSe

simultaneously.

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Keywords

references

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