Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor

BAIXiao; CHENG Xiao-man; FAN Jian-feng; JIANG Jing; ZHENG Ling-cheng; WU Feng

doi:10.3788/fgxb20143504.0470

您当前的位置：

首页 >

文章列表页 >

Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor

更新时间：2020-08-12

- Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor
- Chinese Journal of Luminescence Vol. 35, Issue 4, Pages: 470-475(2014)
- 作者机构：
  
  1. 天津理工大学理学院天津,300384
  2. 天津理工大学教育部显示材料与光电器件重点实验室, 天津光电材料与器件重点实验室天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143504.0470
  CLC： O47;TN386
- Received：23 December 2013，
  
  Revised：28 January 2014，
  
  Published：03 April 2014
- 稿件说明：
移动端阅览
白潇, 程晓曼, 樊剑锋等. PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2014,35(4): 470-475

BAIXiao, CHENG Xiao-man, FAN Jian-feng etc. Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor[J]. Chinese Journal of Luminescence, 2014,35(4): 470-475
白潇, 程晓曼, 樊剑锋等. PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2014,35(4): 470-475 DOI： 10.3788/fgxb20143504.0470.

BAIXiao, CHENG Xiao-man, FAN Jian-feng etc. Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor[J]. Chinese Journal of Luminescence, 2014,35(4): 470-475 DOI： 10.3788/fgxb20143504.0470.

摘要

采用溶液制备法制备了用PVA作为绝缘层、P3HT作为有源层的有机场效应晶体管，

研究了不同浓度PVA栅绝缘层对器件性能的影响。实验结果显示

以质量分数为8%的PVA溶液制备的栅绝缘层具有最好的性能，器件的场效应迁移率为0.31 cm

-1

，阈值电压为-6 V。进一步分析了PVA栅绝缘层浓度对器件性能提高的原因，结果表明，对于制备溶液化的有机场效应晶体管，选取合适的PVA栅绝缘层浓度非常重要。

Abstract

Poly(3-hexylthiophene) based organic field effect transistors with poly(vinyl alcohol) gate dielectrics were fabricated by solution process. The effects of PVA gate dielectrics concentration on the performance of the devices were investigated. The experimental results show that the device with PVA mass fraction of 8% displays the best performance

which the field-effect mobility is up to 0.31 cm

-1

and the threshold voltage is as low as -6 V. Furthermore

the reason for the performance improvement of the devices was analyzed. It indicates that the appropriate PVA concentration is extremely important for the solution-processed OFETs.

关键词

Keywords

references

Zheng H, Cheng X M, Tian H J, et al. Enhanced performance of C60 organic field effect transistors using a tris (8-hydroxyquinoline) aluminum buffer layer [J]. J. Semicond.(半导体学报), 2011, 32(9):094005-1-4 (in English). [2] Sun Z, Ye Q, Yan C, et al. Low band gap polycyclic hydrocarbons: From closed-shell near infrared dyes and semiconductors to open-shell radicals [J]. Chem. Soc. Rev., 2012, 41(23):7857-7889. [3] Ling Q D, Liaw D J, Zhu C X, et al. Polymer memories: Bistable electrical switching and device performance [J]. Polymer, 2007, 48(18):917-978. [4] Namdas E B, Samuel I D W, Shukla D, et al. Organic light emitting complementary inverters [J]. Appl. Phys. Lett., 2010, 96(4): 043304-1-3. [5] Bao Z N, Dodabalapur A, Lovinger A J. Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J]. Appl. Phys. Lett., 1996, 69(26):4108-4110. [6] Sung K P, Yong H K, Jeong I H, et al. Electrical characteristics of poly (3-hexylthiophene) thin film transistors printed and spin-coated on plastic substrates [J]. Synth. Met., 2003, 139(2):377-384. [7] Chang J F, Sun B Q, Breiby D W, et al. Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents [J]. Chem. Mater., 2004, 16(23):4772-4776. [8] Kim K, Yu H, Kang H. Influence of intermolecular interactions of electron donating small molecules on their molecular packing and performance in organic electronic devices [J]. J. Mater. Chem. A, 2013, 46(1):14538-14547. [9] Stingelinstutzmann N, Smits E, Wondergem H, et al. Thin-film field-effect transistors, inverters and ring-oscillators from vitreous, solution-processed rubrene hypereutectics [J]. Nat. Mater., 2005, 4:601-606. [10] DiBenedetto S A, Facchetti A. Self-assembly: Molecular self-assembled monolayers and multilayers for organic and unconventional inorganic thin-film transistor applications [J]. Adv. Mater., 2009, 21(14):1406-1433. [11] Liang X Y, Cheng X M, Du B Q, et al. Enhanced performance of C60 n-type organic field-effect transistors using a pentacene passivation layer [J]. J. Semicond.(半导体学报), 2013, 34(8):084002-1-5 (in English). [12] Singh T B, Mwghdadi F, Gnes S, et al. High-performance ambipolar pentacene organic field-effect transistors on poly (vinyl alcohol) organic gate dielectric [J]. Adv. Mater., 2005, 17(19):2315-2320. [13] Yoshihito K, Yuki Y, Kiroaki H, et al. OFET characteristics of stretched poly(3-hexylthiophene) films [J]. Electrochem., 2012, 78(3):191-193. [14] Necliudov P V, Shur M S, Gundlach D J, et al. Modeling of organic thin film transistors of different designs [J]. J. Appl. Phys., 2000, 88(11):6594-6597. [15] Seshadri K,Frisbie C D. Potentiometry of an operating organic semiconductor field-effect transistor [J]. Appl. Phys. Lett., 2001, 78(7):993-995. [16] Horowitz G. Field-effect transistors based on short organic molecules [J]. J. Mater. Chem., 1999, 9(9):2021-2026. [17] Meng H, Liu C C, Jiang C J, et al. Effect of gate metal on polymer transistor with glass substrate [J]. Appl. Phys. Lett., 2006, 89(24):243503-1-3.

Views

108

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs

High Performance C₆₀ Organic Field-effect Transistors with Albumen as The Gate Dielectric

Performance and Dielectric Property of Single/Double Acceptor Based Planar Heterojuntion Organic Photovoltaic Cells with P3HT Donor

Multiple Peak Calibration of Gasoline-in-water Concentration Measurement Using Three-dimensional Fluorescence Spectra

Preparation of Novel PVA Fluorescent Gels and Their Photophysical Properties

Related Author

JIANG Jing

ZHENG Ling-cheng

WANG Qian

WU Feng

CHENG Xiao-man

LIANG Xiao-yu

FAN Jian-feng

Related Institution

School of Science, Tianjin University of Technology

Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Device

School of Material Science and Engineering, Shanghai University

Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰