Improving of The Performance of Organic Thin Film Transistor by Using Bphen Buffer Layer

LIU Zi-yang; LIU Dong-yang; ZHANG Shi-ming; WANG Xue-hui; ZHAO Yi; LIU Shi-yong

doi:10.3788/fgxb20143502.0195

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Improving of The Performance of Organic Thin Film Transistor by Using Bphen Buffer Layer

更新时间：2020-08-12

- Improving of The Performance of Organic Thin Film Transistor by Using Bphen Buffer Layer
- Chinese Journal of Luminescence Vol. 35, Issue 2, Pages: 195-201(2014)
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,吉林长春,130012
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143502.0195
  CLC： TN321+.5
- Received：01 October 2013，
  
  Revised：03 November 2013，
  
  Published：03 February 2014
- 稿件说明：
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刘子洋, 刘东洋, 张世明等. Bphen作为电极缓冲层对有机薄膜晶体管性能的改善[J]. 发光学报, 2014,35(2): 195-201

LIU Zi-yang, LIU Dong-yang, ZHANG Shi-ming etc. Improving of The Performance of Organic Thin Film Transistor by Using Bphen Buffer Layer[J]. Chinese Journal of Luminescence, 2014,35(2): 195-201
刘子洋, 刘东洋, 张世明等. Bphen作为电极缓冲层对有机薄膜晶体管性能的改善[J]. 发光学报, 2014,35(2): 195-201 DOI： 10.3788/fgxb20143502.0195.

LIU Zi-yang, LIU Dong-yang, ZHANG Shi-ming etc. Improving of The Performance of Organic Thin Film Transistor by Using Bphen Buffer Layer[J]. Chinese Journal of Luminescence, 2014,35(2): 195-201 DOI： 10.3788/fgxb20143502.0195.

摘要

研究了二苯基邻菲罗啉以及氟化锂作为电极缓冲层对底栅顶接触型有机薄膜晶体管性能的影响，结果表明二苯基邻菲罗啉是一种比氟化锂更好的缓冲层材料。通过对二苯基邻菲罗啉缓冲层厚度的优化，获得了迁移率为0.302 cm

-1

、阈值电压为-31.2 V、开关比为6.210

的器件。器件性能提升的原因是由于二苯基邻菲罗啉缓冲层的引入降低了金电极与并五苯界面的空穴注入势垒与接触电阻。

Abstract

Organic thin film transistors with different buffer layers were investigated. Electric measurements reveal that 4

7-diphenyl-1

10-phenanthroline is a better buffer layer material than lithium fluoride. In comparison with the device with no buffer layer

the device with 4

7-diphenyl-1

10-phenanthroline (3 nm) buffer layer obtains an enhanced mobility of 0.302 cm

-1

threshold voltage of-31.2 V and on/off current ratio of 6.210

. The improvements of the device performance are attributed to the reduction of barrier height and the contact resistance at Au/pentacene interface.

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Keywords

references

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