Photoelectric Conversion Properties of Graphene Oxide Film Prepared by Electrochemical Deposition

HUANG He-zhou; HE Yun-qiu; LI Wen-you; CHU Xiao-fei; LI Yi-ming; CHEN Hui-min; LIU De-yu

doi:10.3788/fgxb20143502.0142

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Photoelectric Conversion Properties of Graphene Oxide Film Prepared by Electrochemical Deposition

更新时间：2020-08-12

- Photoelectric Conversion Properties of Graphene Oxide Film Prepared by Electrochemical Deposition
- Chinese Journal of Luminescence Vol. 35, Issue 2, Pages: 142-148(2014)
- 作者机构：
  
  同济大学材料科学与工程学院上海,201804
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143502.0142
  CLC： O646
- Received：29 October 2013，
  
  Revised：17 December 2013，
  
  Published：03 February 2014
- 稿件说明：
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黄河洲, 贺蕴秋, 李文有等. 电化学法制备的还原氧化石墨烯薄膜及其光电性能研究[J]. 发光学报, 2014,35(2): 142-148

HUANG He-zhou, HE Yun-qiu, LI Wen-you etc. Photoelectric Conversion Properties of Graphene Oxide Film Prepared by Electrochemical Deposition[J]. Chinese Journal of Luminescence, 2014,35(2): 142-148
黄河洲, 贺蕴秋, 李文有等. 电化学法制备的还原氧化石墨烯薄膜及其光电性能研究[J]. 发光学报, 2014,35(2): 142-148 DOI： 10.3788/fgxb20143502.0142.

HUANG He-zhou, HE Yun-qiu, LI Wen-you etc. Photoelectric Conversion Properties of Graphene Oxide Film Prepared by Electrochemical Deposition[J]. Chinese Journal of Luminescence, 2014,35(2): 142-148 DOI： 10.3788/fgxb20143502.0142.

摘要

通过电化学方法在FTO导电玻璃上沉积了不同还原程度（C/O）的还原氧化石墨烯薄膜（rGO），其中rGO薄膜由未经处理的GO电解液制备，A-rGO由碱处理后的电解液制备，B-rGO由NaBH

处理后的电解液制备。利用XRD、XPS、SEM、UV-Vis对薄膜的化学结构和微观形貌进行了表征，并研究了薄膜在可见光照射下的光电性能。结果表明:在1.8 V下沉积的不同C/O比的rGO薄膜中，B-rGO薄膜的C/O比最高（8.1），带隙最小（0.54 eV），导带最靠近FTO的导带位置。在可见光照射下，几种薄膜均产生了阴极电流，电流密度随C/O比的增大而增大，其中B-rGO最大达1 Acm

-2

。本文提供了一种通过控制C/O比来控制rGO薄膜光电性能的方法。

Abstract

Reduced graphene oxide (rGO) films with different reduction degrees (C/O ratios) were prepared on FTO by electrochemical deposition method. rGO prepared from GO electrolyte

A-rGO prepared from electrolyte after alkali treatment

and B-rGO prepared from electrolyte after NaBH

treatment

respectively. XRD

XPS

SEM and UV-Vis analysis were adopted to analyze the chemical structure and morphology of the films. The photoelectric properties of the films under visible light were studied. The results show that B-rGO film has the highest C/O ratio (8.1) and the lowest band gap (0.54 eV) among the three films

and its conduction band is almost closed to the FTO's. Under visible light illuminating

the films all generate cathodic photocurrent

and the photocurrent density increases with the increasing of C/O ratio. The photocurrent density of B-rGO (1 Acm

-2

) is the largest in the three films. In our work

we provide a feasible method to control the photoelectric property of rGO films by controlling their C/O ratios.

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Keywords

references

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