Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)

XIONG Xian-feng; YUAN Miao; LIN Guang-qing; WANG Xiang-hua; LYU Guo-qiang

doi:10.3788/fgxb20143501.0105

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Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)

更新时间：2020-08-12

- Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)
- Chinese Journal of Luminescence Vol. 35, Issue 1, Pages: 105-112(2014)
- 作者机构：
  
  1. 合肥工业大学电子科学与应用物理学院,安徽合肥,230009
  2. 合肥工业大学仪器科学与光电工程学院,安徽合肥,230009
  3. 特种显示技术教育部重点实验室特种显示技术国家工程实验室现代显示技术省部共建国家重点实验室培育基地合肥工业大学光电技术研究院, 安徽合肥 230009
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20143501.0105
  CLC： O484.4;TN383+.1
- Received：29 August 2013，
  
  Revised：20 October 2013，
  
  Published：03 January 2014
- 稿件说明：
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熊贤风, 元淼, 林广庆, 王向华, 吕国强. 基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征[J]. 发光学报, 2014,35(1): 105-112

XIONG Xian-feng, YUAN Miao, LIN Guang-qing, WANG Xiang-hua, LYU Guo-qiang. Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)[J]. Chinese Journal of Luminescence, 2014,35(1): 105-112
熊贤风, 元淼, 林广庆, 王向华, 吕国强. 基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征[J]. 发光学报, 2014,35(1): 105-112 DOI： 10.3788/fgxb20143501.0105.

XIONG Xian-feng, YUAN Miao, LIN Guang-qing, WANG Xiang-hua, LYU Guo-qiang. Preparation and Characterization of Inkjet-printed Small-molecule Organic Semiconductor Thin Films Based on A Surface Modification Layer of Poly(4-vinylphenol)[J]. Chinese Journal of Luminescence, 2014,35(1): 105-112 DOI： 10.3788/fgxb20143501.0105.

摘要

采用旋涂法预先在SiO

衬底表面形成一层聚（4-乙烯基苯酚）（PVP）作为表面修饰层，以喷墨打印的6，13-双（三异丙基甲硅烷基乙炔基）并五苯（TIPS并五苯）作为有源层制作有机薄膜晶体管，有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极，形成底栅顶接触结构的有机薄膜晶体管（OTFT）器件。作为对比，在未经过表面修饰的SiO

衬底上采用相同条件打印TIPS并五苯薄膜晶体管，发现在经过PVP修饰的SiO

衬底上打印的单点厚度更均匀，咖啡环效应被抑制或被消除；而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大，相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT，器件在饱和区的平均场效应迁移率达到了0.065 cm

-1

；而直接在SiO

衬底上制作的器件，相应的平均场效应迁移率仅为0.02 cm

-1

。

Abstract

Organic thin-film transistors (OTFTs) were prepared with inkjet-printed 6

13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the active semiconducting layer. Poly(4-vinylphenol) (PVP) was spin-coated on the surface of SiO

substrates as the surface modification layer to improve film morphology of the semiconductor. The source and drain electrodes were thermally eva-porated through a metal mask to complete the OTFTs with a bottom-gate top-contact (BGTC) structure. Compared with the TIPS-pentacene films inkjet-printed on the controlled SiO

substrate without PVP modification layer

the single-drop semiconductor films deposited on the PVP-modified substrate show much reduced coffee-ring effect and therefore better film uniformity

while large-area films with rectangular pattern printed with overlapping multi-drop shows larger grain size and the corresponding OTFTs also exhibits enhanced field-effect mobility. The average field-effect mobility of the inkjet-printed film on the PVP-modified substrate was as high as 0.065 cm

-1

while the average field-effect mobility of the semiconductor directly printed on the SiO

substrate was merely 0.02 cm

-1

关键词

Keywords

references

Meijer E J, De Leeuw D M, Setayesh S, et al. Solution-processed ambipolar organic field-effect transistors and inverters[J]. Nat. Mater., 2003, 2(10):678-682.[2] Singh M, Haverinen H M, Dhagat P, et al. Inkjet printing-process and its applications[J]. Adv. Mater., 2010, 22(6): 673-685.[3] Zhang P, Hu W H, Jing Y N, et al. Progress in organic thin film transistors and circuits fabricating by inkjet printing[J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2010, 25(1):34-39 (in Chinese).[4] Sirringhaus H, Kawase T, Friend R H, et al. High-resolution inkjet printing of all-polymer transistor circuits[J]. Science, 2000, 290(5499):2123-2126.[5] Bharathan J, Yang Y. Polymer electroluminescent devices processed by inkjet printing: Polymer light-emitting logo[J]. Appl. Phys. Lett., 1998, 72(21):2660-2662.[6] Shaheen S E, Radspinner R, Peyghambarian N, et al. Fabrication of bulk heterojunction plastic solar cells by screen printing[J]. Appl. Phys. Lett., 2001, 79(18):2996-2998.[7] Paradkar A, Ambike A A, Jadhav B K, et al. Characterization of curcumin-PVP solid dispersion obtained by spray drying[J]. Int. J. Pharm., 2004, 271(1-2):281-286.[8] Salleo A, Chabinyc M L, Yang M S, et al. Polymer thin-film transistors with chemically modified dielectric interfaces[J]. Appl. Phys. Lett., 2002, 81(23):4383-4385.[9] Lin G Q, Li P, Xiong X F, et al. Preparation of high-performance flexible organic thin-film transistor through different dielectric surface modification[J]. Chin. J. Lumin.(发光学报), 2013, 34(10):1392-1399 (in Chinese).[10] Hwang D K, Lee K, Kim J H, et al. Low-voltage high-mobility pentacene thin-film transistors with polymer/high-k oxide double gate dielectrics[J]. Appl. Phys. Lett., 2006, 88(24):243513-1-3.[11] Hwang D K, Lee K, Kim J H, et al. Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors[J]. Appl. Phys. Lett., 2006, 89(9):1077-1079.[12] Wang X H, Xiong X F, Qiu L Z, et al. Morphology of inkjet printed 6, 13bis(tri-isopropylsilylethynyl) pentacene on surface-treated silica[J]. J. Vac. Sci. Technol. B, 2001, 79(18):2996-2998.[13] Tseng H Y, Subramanian V. All inkjet-printed, fully self-aligned transistors for low-cost circuit applications[J]. Org. Elect., 2011, 12(2):249-256.[14] Tseng H Y. Scaling of Inkjet-printed Transistors Using Novel Printing Techniques[D]. California, USA: Electrical Engineering and Computer Sciences University of California at Berkeley, 2011.[15] Shaheen S E, Radspinner R, Peyghambarian N, et al. Fabrication of bulk heterojunction plastic solar cells by screen printing[J]. Appl. Phys. Lett., 2001, 79(18):2996-2998.[16] Wu S. Polymer interface and adhesion[R]. New York USA: Marcel Dekker, 1982:178-181.[17] Soltman D, Subramanian V. Inkjet-printed line morphologies and temperature control of the coffee ring effect[J]. Langmuir, 2008, 24(5):2224-2231.[18] Walter S R, Youn J, Emery J D, et al. In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors: Origin and control of large performance sensitivities[J]. J. Am. Chem. Soc., 2012, 134(28):11726-11733.[19] Choi D, Ahn B, Kim S H, et al. High-performance triisopropylsilylethynyl pentacene transistors via spin coating with a crystallization-assisting layer[J]. ACS Appl. Mat. Interf., 2012, 4(1):117-122.[20] Cho S Y, Ko J M, Jung J Y, et al. High-performance organic thin film transistors based on inkjet-printed polymer/TIPS pentacene blends[J]. Org. Electron., 2012, 13(8):1329-1339.[21] Lee M W, Ryu G S, Lee Y U, et al. Control of droplet morphology for inkjet-printed TIPS-pentacene transistors[J]. Microelectron. Eng., 2012, 95:1-4.

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