Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD

CHEN Xiang; XING Yan-hui; HAN Jun; HUO Wen-juan; ZHONG Lin-jian; CUI Ming; FAN Ya-ming; ZHU Jian-jun; ZHANG Bao-shun

doi:10.3788/fgxb20133412.1646

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Influence of Al Composition on Electrical and Structural Properties of Al_xGa_1-xN/AlN/GaN HEMT Materials Grown by MOCVD

更新时间：2020-08-12

- Influence of Al Composition on Electrical and Structural Properties of Al_xGa_1-xN/AlN/GaN HEMT Materials Grown by MOCVD
- Chinese Journal of Luminescence Vol. 34, Issue 12, Pages: 1646-1650(2013)
- 作者机构：
  
  1. 北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室北京,100124
  2. 中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州,215123
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133412.1646
  CLC： O484
- Received：17 July 2013，
  
  Revised：10 September 2013，
  
  Published：10 December 2013
- 稿件说明：
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陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 朱建军, 张宝顺. Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响[J]. 发光学报, 2013,34(12): 1646-1650

CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013,34(12): 1646-1650
陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 朱建军, 张宝顺. Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响[J]. 发光学报, 2013,34(12): 1646-1650 DOI： 10.3788/fgxb20133412.1646.

CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013,34(12): 1646-1650 DOI： 10.3788/fgxb20133412.1646.

摘要

采用金属有机化合物化学气相沉积（MOCVD）方法制备了不同Al组分（

=0.19，0.22，0.25，0.32）的Al

N/AlN/GaN 结构的高电子迁移率晶体管（HEMT）材料。研究了Al

N势垒层中Al组分对HEMT材料电学性质和结构性质的影响。研究结果表明，在一定的Al组分范围内，二维电子气（2DEG）浓度和迁移率随着Al组分的升高而增大。然而，过高的Al组分导致HEMT材料表面粗糙度增大，2DEG迁移率降低，该实验现象在另一方面得到了原子力显微镜测试结果的验证。在最佳Al组分（25%）范围内，获得的 HEMT材料的2DEG浓度和室温迁移率分别达到1.210

-2

和1 680 cm

/（Vs），方块电阻低至310 /□。

Abstract

N/AlN/GaN high electron mobility transistor (HEMT) materials with different Al compositions (

=0.19

0.22

0.25

0.32) were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The effects of Al composition on electrical and structural properties of HEMTs materials were analyzed. It is observed that two-dimensional electron gas (2DEG) density and mobility are improved with the raising of Al content within a certain range. However

too high Al composition will make the surface turn to be rougher and the mobility deteriorate

which was reinforced by the test results of atomic force microscopy (AFM). The optimum Al content is 25%. Based on this

the HEMT materials showed a high 2DEG density of 1.210

-2

with a low sheet resistance of 310 /□

and highly Hall mobility of 1 680 cm

/(Vs) at room temperature.

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Keywords

references

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