Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method

LUO Wen-bin; CHEN Wen-bin

doi:10.3788/fgxb20133411.1550

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Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method

更新时间：2020-08-12

- Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method
- Chinese Journal of Luminescence Vol. 34, Issue 11, Pages: 1550-1554(2013)
- 作者机构：
  
  电子科技大学光电信息学院四川省显示科学与技术重点实验室,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133411.1550
  CLC： O484
- Received：01 July 2013，
  
  Revised：22 August 2013，
  
  Published：10 November 2013
- 稿件说明：
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罗文彬, 陈文彬. 退火温度对溶胶-凝胶法制备锌锡氧化物薄膜晶体管的影响[J]. 发光学报, 2013,34(11): 1550-1554

LUO Wen-bin, CHEN Wen-bin. Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method[J]. Chinese Journal of Luminescence, 2013,34(11): 1550-1554
罗文彬, 陈文彬. 退火温度对溶胶-凝胶法制备锌锡氧化物薄膜晶体管的影响[J]. 发光学报, 2013,34(11): 1550-1554 DOI： 10.3788/fgxb20133411.1550.

LUO Wen-bin, CHEN Wen-bin. Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method[J]. Chinese Journal of Luminescence, 2013,34(11): 1550-1554 DOI： 10.3788/fgxb20133411.1550.

摘要

采用溶胶-凝胶法制备了非晶锌锡氧化物(ZTO)薄膜晶体管(TFT)

通过热重-差热分析(TG-DTA)对ZTO胶体中的化学反应进行了分析

研究了不同退火温度对ZTO TFTs性能的影响。结果表明:当退火温度在300~500℃范围内时

薄膜为非晶态结构

薄膜表面致密、平整。当退火温度达到400℃时

薄膜在可见光范围内具有高透过率(

85%)。随着退火温度的升高

器件阈值电压明显降低

由15.85 V降至3.76 V

载流子迁移率由0.004 cm

-1

提高到5.16 cm

-1

开关电流比达到10

。退火温度的升高明显改善了ZTO TFT的电学性能。

Abstract

Zinc-tin-oxide (ZTO) thin film transistors (TFTs) were fabricated by sol-gel method. Thermogravimetric and differential thermal analyses (TG-DTAs) were performed to investigate the chemical reactivity in the ZTO solutions. The effects of annealing temperatures on characteristics of ZTO-TFTs were investigated in this paper. With the increasing of annealing temperatures

all samples are amorphous

and surface is uniform. The ZTO thin films annealed at 400℃ and 500℃ are highly transparent (

85%) in the visible region. When the annealing temperature increased from 300℃ to 500℃

the threshold voltage of solution-processed ZTO TFTs decreased from 15.85 V to 3.76 V

and the saturation mobility increased from 0.004 cm

-1

to 5.16 cm

-1

off

current ratio of 10

was obtained at 500℃.

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Keywords

references

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