Analysis on The Ageing Mechanism of GaN-based Blue and Green LED by Electrical Stresses

LI Zhi-ming; PAN Shu-wan; CHEN Song-yan

doi:10.3788/fgxb20133411.1521

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Analysis on The Ageing Mechanism of GaN-based Blue and Green LED by Electrical Stresses

更新时间：2020-08-12

- Analysis on The Ageing Mechanism of GaN-based Blue and Green LED by Electrical Stresses
- Chinese Journal of Luminescence Vol. 34, Issue 11, Pages: 1521-1526(2013)
- 作者机构：
  
  1. 三安光电股份有限公司, 福建厦门 361009
  2. 华侨大学工学院,福建泉州,362021
  3. 厦门大学物理系半导体光子学研究中心,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133411.1521
  CLC： TN383.1
- Received：04 July 2013，
  
  Revised：06 September 2013，
  
  Published：10 November 2013
- 稿件说明：
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李志明, 潘书万, 陈松岩. GaN基蓝绿光LED电应力老化分析[J]. 发光学报, 2013,34(11): 1521-1526

LI Zhi-ming, PAN Shu-wan, CHEN Song-yan. Analysis on The Ageing Mechanism of GaN-based Blue and Green LED by Electrical Stresses[J]. Chinese Journal of Luminescence, 2013,34(11): 1521-1526
李志明, 潘书万, 陈松岩. GaN基蓝绿光LED电应力老化分析[J]. 发光学报, 2013,34(11): 1521-1526 DOI： 10.3788/fgxb20133411.1521.

LI Zhi-ming, PAN Shu-wan, CHEN Song-yan. Analysis on The Ageing Mechanism of GaN-based Blue and Green LED by Electrical Stresses[J]. Chinese Journal of Luminescence, 2013,34(11): 1521-1526 DOI： 10.3788/fgxb20133411.1521.

摘要

对InGaN/GaN多量子阱蓝光和绿光LED进行了室温20

60 mA加速电流下的电应力老化研究

发现蓝光与绿光样品经过60 mA电流老化424 h后

其电学性能表现出一定的共性与差异性:在小测量电流下

绿光样品的光衰减幅度较蓝光样品大~9%;而在较大测量电流 (20 mA)下

两者的光衰减幅度基本相同 (18%)。同时

蓝绿光样品的正向电学性能随老化时间的变化幅度基本一致

反映出它们具有相似的退化机制

绿光样品老化后增多的缺陷大部分体现为简单的漏电行为

而并非贡献于非辐射复合中心。在此基础上对GaN基外延结构进行了优化

优化后的LED长期老化的光衰减幅度较参考样品降低了3%。

Abstract

The behavior of the related reliability of InGaN-based blue and green LED chips were investigated with 20

60 mA constant current stress up to 424 h at room temperature. Under 60 mA constant current stress

the green LED chip showed more prominent optical power degradation at low measuring current levels than high measuring current levels. While

the blue LED chip showed the consistent optical power decrease at different measuring current levels. It should be pointed out that

at high measured current levels (20 mA)

blue and green LED chips expressed similar optical degradation (18%) after the aging tests. Meanwhile

the aging stress does not significant affect the forward-bias electrical characteristics of blue and green LED chips

which indicated the similar degradation process in some aging tests. It is believed that the induced defects in blue LED by electrical stress mainly contribute to the nonradiative recombination centers

while in green LED chip the defects contribute to the localized leakage paths rather than the nonradiative recombination centers. Based on the mechanism analysis of blue and green LED

the design of GaN based epitaxial structure was optimized

and the thickness of quantum barrier was reduced to weaken the internal electrical field in the active layer to improve the reliability of LED.

关键词

Keywords

references

Su Y H. Low frequency noise stdudy on GaN-based light emitting diodes . Xi'an: Xidian University, 2008.[2] Steranka F M, Bhat J, Collins D, et al. High power LEDs-technology status and market applications [J]. Phys. Status Solidi A, 2002, 194(2):380-388.[3] Nakamura S, Pearton S, Fasol G. The Blue Laser Diode: The Complete Story [M]. 2nd Edition. Berlin: Springer, 2000:57.[4] Shen H P. Research on reliability prediction mechanism for high-power LEDs . Hangzhou: Zhejiang University, 2008.[5] Meneghesso G, Meneghini M, Zanoni E. Recent results on the degradation of white LEDs for lighting [J]. J. Phys. D: Appl. Phys., 2010, 43(35):354007-1-11.[6] Zhao A L, Shang S J, Chen J X. Life test and failure mechanism analysis for high-power white LED [J]. China Illumin. Eng. J.(照明工程学报), 2010, 21(1):48-52 (in Chinese).[7] Chen Y, Wang L C, Yi X Y, et al. Analysis in reliability of GaN-based high power light emitting diodes [J]. Chin. J. Semicond.(半导体学报), 2007, 28(z1):500-503 (in Chinese).[8] Narendran N, Gu Y, Freyssinier J P, et al. Solid-state lighting: failure analysis of white LEDs [J]. J. Cryst. Growth, 2004, 268(3-4):449-456.[9] Zhou Z, Feng S W, Zhang G C, et al. The aging characteristics of high-power GaN-based white light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1046-1050 (in Chinese).[10] Manyakhin F, Kovalev A, Yunovich A E. Aging mechanisms of InGaN/AlGaN/GaN light-emitting diodes operating at high currents [J]. MRS Int. J. Nitride Semicond, 1998, 3(53):1-6.[11] Shan Q F, Meyaard D S, Dai Q, et al. Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes [J]. Appl. Phys. Lett., 2011, 99(25):253506-1-3.[12] Huang S J, Xian Y L, Fan B F, et al. Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage [J]. J. Appl. Phys., 2011, 110(6):064511-1-6.

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