Study of Oxide-grating Vertical-cavity Surface-emitting Lasers

ZHANG Xiang-wei; NING Yong-qiang; QIN Li; LIU Yun; WANG Li-jun

doi:10.3788/fgxb20133411.1517

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Study of Oxide-grating Vertical-cavity Surface-emitting Lasers

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- Study of Oxide-grating Vertical-cavity Surface-emitting Lasers
- Chinese Journal of Luminescence Vol. 34, Issue 11, Pages: 1517-1520(2013)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
  3. 西安工业大学,陕西西安,710032
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133411.1517
  CLC： TN248.4
- Received：27 April 2013，
  
  Revised：23 May 2013，
  
  Published：10 November 2013
- 稿件说明：
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张祥伟, 宁永强, 秦莉, 刘云, 王立军. 氧化光栅型垂直腔面发射激光器的研究[J]. 发光学报, 2013,34(11): 1517-1520

ZHANG Xiang-wei, NING Yong-qiang, QIN Li, LIU Yun, WANG Li-jun. Study of Oxide-grating Vertical-cavity Surface-emitting Lasers[J]. Chinese Journal of Luminescence, 2013,34(11): 1517-1520
张祥伟, 宁永强, 秦莉, 刘云, 王立军. 氧化光栅型垂直腔面发射激光器的研究[J]. 发光学报, 2013,34(11): 1517-1520 DOI： 10.3788/fgxb20133411.1517.

ZHANG Xiang-wei, NING Yong-qiang, QIN Li, LIU Yun, WANG Li-jun. Study of Oxide-grating Vertical-cavity Surface-emitting Lasers[J]. Chinese Journal of Luminescence, 2013,34(11): 1517-1520 DOI： 10.3788/fgxb20133411.1517.

摘要

通过分析矩形出光孔径和亚波长金属光栅结构

发现大孔径高功率垂直腔面发射激光器(VCSEL)的偏振控制的难点在于横模非常复杂。因此提出一种新型的氧化光栅型VCSEL结构

不仅能够很好地在有源区内引入各项异性的增益结构

并且最大的优势还在于能够完美地控制大孔径VCSEL的横模。通过有限元软件对器件有源区的电流分布进行了模拟

发现当光栅脊的宽度为1.8 m时

载流子在光栅两端聚集的现象基本上可以消除

而且其电流密度分布差可以达到很高。

Abstract

The difficulty of controlling the polarization of lager aperture VCSEL is the complicated transverse modes after analysing the structures of rectangle aperture VCSEL and sub-wavelength metal-grating VCSEL. So we put forward a new type of structure-oxidation type grating VCSEL structure. This structure can not only introduce anisotropy gain into active region but its biggest advantage is able to perfect control of large aperture VCSEL transverse mode. The sturcture was simulited by finite element software

and it is found that the structure achieve two goals when the grating ridge is 1.8 m.

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Keywords

references

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ZHANG Xiang-wei

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Related Institution

University of Chinese Academy of Sciences, Beijing 100049, China

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Graduate University of Chinese Academy of Sciences

State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

Jlight Semiconductor Technology Co. ， Ltd

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