WANG Tong-tong. Roughness Decreasing of Silicon Carbide Hologram-ion Beam Etching Grating by Using Surface Modification Technique[J]. Chinese Journal of Luminescence, 2013,34(11): 1489-1493
WANG Tong-tong. Roughness Decreasing of Silicon Carbide Hologram-ion Beam Etching Grating by Using Surface Modification Technique[J]. Chinese Journal of Luminescence, 2013,34(11): 1489-1493 DOI: 10.3788/fgxb20133411.1489.
Roughness Decreasing of Silicon Carbide Hologram-ion Beam Etching Grating by Using Surface Modification Technique
The gratings were fabricated by hologram-ion beam etching technique on the silicon carbide substrate that has fine stiffness and thermal stability. The intrinsic defects of the silicon carbide leads to a rough surface of the grating grooves
the roughness of the bottom and the top of the grating grooves are 29.6 nm and 65.3 nm (
R
q
)
respectively. A uniform silicon coating were deposited by Plasma Ion Assisted Deposition (PIAD) technique on the surface of the silicon carbide substrate
then a super smooth surface was obtained after fine polishing. Characterized by XRD
we found the silicon coating is amorphous. After fine polishing
the surface roughness of the silicon carbide is 0.64 nm(
R
q
) measuring by AFM. The roughness of the grating grooves are significantly decreased
the roughness of the bottom and the top of the grating grooves are 2.96 nm and 7.21 nm(
R
q
)
respectively. Comparing with the grating grooves before surface modification
the roughness of the bottom and the top are 1/10 and 1/9
respectively.
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references
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