Electroluminescence Characteristics of Si-rich a-SiOxNy：H Flims

LIN Ze-wen; LIN Zhen-xu; SONG Chao; ZHANG Yi; WANG Xiang; GUO Yan-qing; SONG Jie; HUANG Xin

doi:10.3788/fgxb20133411.1479

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Electroluminescence Characteristics of Si-rich a-SiO_xN_y：H Flims

更新时间：2020-08-12

- Electroluminescence Characteristics of Si-rich a-SiO_xN_y：H Flims
- Chinese Journal of Luminescence Vol. 34, Issue 11, Pages: 1479-1482(2013)
- 作者机构：
  
  1. 华中师范大学物理科学与技术学院,湖北武汉,430079
  2. 韩山师范学院物理与电子工程系,广东潮州,521041
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133411.1479
  CLC： O472.3
- Received：19 June 2013，
  
  Revised：10 September 2013，
  
  Published：10 November 2013
- 稿件说明：
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林泽文, 林圳旭, 宋超, 张毅, 王祥, 郭艳青, 宋捷, 黄新堂, 黄锐. 富硅a-SiOxNy：H薄膜的电致发光特性[J]. 发光学报, 2013,34(11): 1479-1482

LIN Ze-wen, LIN Zhen-xu, SONG Chao, ZHANG Yi, WANG Xiang, GUO Yan-qing, SONG Jie, HUANG Xin-tang, HUANG Rui. Electroluminescence Characteristics of Si-rich a-SiOxNy：H Flims[J]. Chinese Journal of Luminescence, 2013,34(11): 1479-1482
林泽文, 林圳旭, 宋超, 张毅, 王祥, 郭艳青, 宋捷, 黄新堂, 黄锐. 富硅a-SiOxNy：H薄膜的电致发光特性[J]. 发光学报, 2013,34(11): 1479-1482 DOI： 10.3788/fgxb20133411.1479.

LIN Ze-wen, LIN Zhen-xu, SONG Chao, ZHANG Yi, WANG Xiang, GUO Yan-qing, SONG Jie, HUANG Xin-tang, HUANG Rui. Electroluminescence Characteristics of Si-rich a-SiOxNy：H Flims[J]. Chinese Journal of Luminescence, 2013,34(11): 1479-1482 DOI： 10.3788/fgxb20133411.1479.

摘要

采用甚高频等离子体增强化学气相沉积方法制备富硅氮氧化硅(a-SiO

0.35

0.59

:H)薄膜

以这层薄膜作为有源层构建发光二极管。实验结果表明器件在室温下可观测到强的电致红光发射

发光峰在715 nm附近

与其光致发光峰位一致。电致发光谱测量还表明器件开启电压为8 V

器件的电致发光强度随注入电流的增大呈线性递增关系。电流-电压特性分析表明器件的载流子输运机制以Pool-Frenkel(P-F)发射模型为主。结合发光有源层的微结构分析

初步认为电致红光发射来自于电子和空穴通过有源层的带尾态的辐射复合。

Abstract

a-SiO

0.35

0.59

:H films were fabricated by very high frequency plasma enhanced chemical vapor deposition method and used as the active layers in the light-emitting diodes. Strong red electroluminescence (EL) from the diode can be clearly observed at room temperature. The EL from the diode is peaked at around 715 nm

very similar to that of the PL spectra. The turn-on voltage for the device is 8 V. It is also found that there is a linear relationship between the integrated EL intensity and the injected current. In addition

the

I-V

characteristics indicates that the Pool-Frenkel (P-F) emission behavior is dominant in the carrier transport process in the diode. Combining with the microstructure analysis for the luminescent active layer

the red electroluminescence is tentatively suggested from the recombination of electron-hole pairs at band tail states of a-SiO

0.35

0.59

:H layer.

关键词

Keywords

references

Pavesi L, Dal Negro L, Mazzoleni C, et al. Optical gain in silicon nanocrystals [J]. Nature, 2000, 408(6811):440-444.[2] Lin C F, Liu C W, Chen M J, et al. Electroluminescence at Si band gap energy based on metal-oxide-silicon structures [J]. J. Appl. Phys., 2000, 87(12):8793-8795.[3] Chen K, Huang X, Xu J, et al. Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures [J]. Appl. Phys. Lett., 1992, 61(17):2069-2071.[4] Liu C, Li C, Ji A, et al. Exploring extreme particle density and size for blue photoluminescence from as-deposited amorphous Si-in-SiNx films [J]. Appl. Phys. Lett., 86(22):223111-1-3.[5] Wang M, Li D, Yuan Z, et al. Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters [J]. Appl. Phys. Lett., 2007, 90(13):131903-1-3.[6] Huang R, Dong H, Wang D, et al. Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices [J]. Appl. Phys. Lett., 2008, 92(18):181106-1-3.[7] Huang R, Song J, Wang X, et al. Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride [J]. Opt. Lett., 2012, 37(4):692-694.[8] Huang R, Chen K, Qian B, et al. Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films [J]. Appl. Phys. Lett., 2006, 89(22):221120-1-3.[9] Huang R, Chen K, Han P, et al. Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices [J]. Appl. Phys. Lett., 2007, 90(9):093515-1-3.[10] Wang X, Huang R, Song C, et al. Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures [J]. Appl. Phys. Lett., 2013, 102(9):081114-1-4.[11] Xu J, Makihara K, Deki H, et al. Electroluminescence from Si quantum dots/SiO2 multilayers with ultrathin oxide layers due to bipolar injection [J]. Solid State Commun., 2009, 149(19-20):739-742.

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