Electrical Properties of ZnO Thin Films Growth Under Different Conditions

ZHAO Peng-cheng; ZHANG Zhen-zhong; YAO Bin; LI Bing-hui; WANG Shuang-peng; JIANG Ming-min

doi:10.3788/fgxb20133411.1430

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Electrical Properties of ZnO Thin Films Growth Under Different Conditions

更新时间：2020-08-12

- Electrical Properties of ZnO Thin Films Growth Under Different Conditions
- Chinese Journal of Luminescence Vol. 34, Issue 11, Pages: 1430-1434(2013)
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  3. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133411.1430
  CLC： O484.4
- Received：02 July 2013，
  
  Revised：22 September 2013，
  
  Published：10 November 2013
- 稿件说明：
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赵鹏程, 张振中, 姚斌, 李炳辉, 王双鹏, 姜明明, 赵东旭, 单崇新, 刘雷, 申德振. 不同生长条件下ZnO薄膜电学性质的研究[J]. 发光学报, 2013,34(11): 1430-1434

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin, LI Bing-hui, WANG Shuang-peng, JIANG Ming-ming, ZHAO Dong-xu, SHAN Chong-xin, LIU Lei, SHEN De-zhen. Electrical Properties of ZnO Thin Films Growth Under Different Conditions[J]. Chinese Journal of Luminescence, 2013,34(11): 1430-1434
赵鹏程, 张振中, 姚斌, 李炳辉, 王双鹏, 姜明明, 赵东旭, 单崇新, 刘雷, 申德振. 不同生长条件下ZnO薄膜电学性质的研究[J]. 发光学报, 2013,34(11): 1430-1434 DOI： 10.3788/fgxb20133411.1430.

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin, LI Bing-hui, WANG Shuang-peng, JIANG Ming-ming, ZHAO Dong-xu, SHAN Chong-xin, LIU Lei, SHEN De-zhen. Electrical Properties of ZnO Thin Films Growth Under Different Conditions[J]. Chinese Journal of Luminescence, 2013,34(11): 1430-1434 DOI： 10.3788/fgxb20133411.1430.

摘要

ZnO薄膜中的高的背景电子浓度能够对p型掺杂形成补偿

从而对p型掺杂造成障碍

了解高背景电子浓度的来源有助于对p型掺杂的研究。本文采用分子束外延技术在不同真空度下在

面蓝宝石衬底上生长了一系列氧化锌薄膜

发现在低真空度下生长的样品的载流子浓度较高

为10

-3

量级;而高真空度下生长的样品

其载流子浓度比低真空生长的样品显著降低

降低了3个数量级。在相同条件下生长的样品

通过不同的后处理手段进行处理后

其电子浓度未发生明显变化

说明氧空位等本征缺陷不是ZnO薄膜中电子的主要来源

高背景电子浓度应该与生长过程中非故意引入的杂质相关。通过低温光致发光表征

发现低真空度下生长的样品在低温下3.366 eV处有强的施主束缚激子发光峰

而高真空度下生长的样品的此发光峰显著变弱。由此

高电子浓度被归结为与生长过程中非故意引入的氢杂质相关。

Abstract

The high background electron concentration in ZnO films can compensate the forming of acceptor

which causes difficulties for p-type doping. Understanding the source of the high background electron concentration is helpful to realize high-efficient p-type doping. In this paper

a series of ZnO thin films were grown on

-plane sapphire substrates under different vacuum by molecular beam epitaxy. The samples grown under low vacuum show high carrier concentration of about 10

-3

however

the electron concentration of the samples grown under high vacuum is significantly lower than the samples grown under high vacuum by three orders of magnitude. For the samples grown under low vacuum

the electron density did almost not change after annealing with various post-treatment

indicating the intrinsic defects

such as oxygen vacancy

are not the main source of electrons in ZnO films. The high background electron concentration should originated from the impurities unintentionally introduced during the growth. The samples grown under low vacuum showed a strong photoluminescence peak at 3.366 eV at 85 K

which is related to shallow-donor-bound exciton. For the samples grown under high vacuum

this emission was weakened markedly. Therefore

defects related to hydrogen were assigned to the main source of the high electron concentrations in the case of low vacuum growth.

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Keywords

references

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