Effect of ICP Etching on Current Transport Properties in High-voltage LED Array

ZHU Yan-xu; FAN Yu-yu; CAO Wei-wei; DENG Ye; LIU Jian-peng

doi:10.3788/fgxb20133410.1362

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Effect of ICP Etching on Current Transport Properties in High-voltage LED Array

更新时间：2020-08-12

- Effect of ICP Etching on Current Transport Properties in High-voltage LED Array
- Chinese Journal of Luminescence Vol. 34, Issue 10, Pages: 1362-1366(2013)
- 作者机构：
  
  1. 北京工业大学北京光电子技术实验室北京,100124
  2. 中国联通北京分公司网管中心网络分析调度中心北京,100029
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133410.1362
  CLC： O472+.8
- Received：07 June 2013，
  
  Revised：28 July 2013，
  
  Published：10 October 2013
- 稿件说明：
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朱彦旭, 范玉宇, 曹伟伟, 邓叶, 刘建朋. ICP刻蚀工艺对LED阵列电流输运特性的影响[J]. 发光学报, 2013,34(10): 1362-1366

ZHU Yan-xu, FAN Yu-yu, CAO Wei-wei, DENG Ye, LIU Jian-peng. Effect of ICP Etching on Current Transport Properties in High-voltage LED Array[J]. Chinese Journal of Luminescence, 2013,34(10): 1362-1366
朱彦旭, 范玉宇, 曹伟伟, 邓叶, 刘建朋. ICP刻蚀工艺对LED阵列电流输运特性的影响[J]. 发光学报, 2013,34(10): 1362-1366 DOI： 10.3788/fgxb20133410.1362.

ZHU Yan-xu, FAN Yu-yu, CAO Wei-wei, DENG Ye, LIU Jian-peng. Effect of ICP Etching on Current Transport Properties in High-voltage LED Array[J]. Chinese Journal of Luminescence, 2013,34(10): 1362-1366 DOI： 10.3788/fgxb20133410.1362.

摘要

在制备串联高压LED阵列工艺中

ICP刻蚀工艺引起的漏电与断路问题是高压LED电流输运特性中的核心问题。本文着重从刻蚀深度、掩模材料以及隔离槽制备方面分析了ICP刻蚀工艺对高压LED的漏电、电极开路等电流输运问题的影响。通过随机抽取样品进行电学测试并结合SEM观测

对比了不同工艺过程

得出ICP工艺是导致串联高压LED阵列中可靠性问题的主要原因。并通过优选ICP刻蚀工艺

使高压LED电流输运特性得以改善

制备出~12 V的四串联高压LED阵列器件。

Abstract

In the manufacturing processes of high-voltage LED

one of the key problems in high-voltage LED current transport is current leakage and open circuit caused by ICP etching. This paper mainly analyzes the impact of ICP etching process on high-voltage LED in different ways

such as current leakage

open circuit and other current transport problems. We mainly discuss the depth of etching

the material of mask and isolation channel preparation in the ICP etching process. Random samples are chosen to measure electrical properties and proceeding SEM micrographs. By comparing the electrical properties and SEM micrographs with different process

we can conclude that ICP process is the main reason

which brings the problem of reliability into series-high-voltage LED array. Finally

the properties of high-voltage LED have been improved by optimizing the ICP etching process and a four series high-voltage LED with excellent current transport properties is got

whose forward voltage is about 12 V at 20 mA current.

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references

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