Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits

JIA Tian-ying; ZHAN Run-ze; DONG Cheng-yuan

doi:10.3788/fgxb20133409.1240

您当前的位置：

首页 >

文章列表页 >

Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits

更新时间：2020-08-12

- Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits
- Chinese Journal of Luminescence Vol. 34, Issue 9, Pages: 1240-1244(2013)
- 作者机构：
  
  上海交通大学电子信息与电气工程学院电子工程系上海,200240
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133409.1240
  CLC： TN321+.5
- Received：12 June 2013，
  
  Revised：30 June 2013，
  
  Published：10 September 2013
- 稿件说明：
移动端阅览
贾田颖, 詹润泽, 董承远. 基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究[J]. 发光学报, 2013,34(9): 1240-1244

JIA Tian-ying, ZHAN Run-ze, DONG Cheng-yuan. Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits[J]. Chinese Journal of Luminescence, 2013,34(9): 1240-1244
贾田颖, 詹润泽, 董承远. 基于a-IGZO TFT的AMOLED像素电路稳定性的仿真研究[J]. 发光学报, 2013,34(9): 1240-1244 DOI： 10.3788/fgxb20133409.1240.

JIA Tian-ying, ZHAN Run-ze, DONG Cheng-yuan. Simulation of The Stability of a-IGZO TFT-OLED Pixel Circuits[J]. Chinese Journal of Luminescence, 2013,34(9): 1240-1244 DOI： 10.3788/fgxb20133409.1240.

摘要

非晶铟镓锌氧化物薄膜晶体管(a-IGZO TFT)有望在有源矩阵有机发光显示(AMOLED)像素电路中得到实际应用

但其电压偏置效应仍会引起电路特性的不稳定。本文利用实验室制备的a-IGZO TFT器件进行参数提取并建立了SPICE仿真模型

通过拟合得到了它的阈值电压随时间变化的方程。在此基础上

采用SPICE软件对基于a-IGZO TFT的2T1C和3T1C两种AMOLED 像素电路的稳定性进行了比较研究

证明3T1C电路对阈值电压偏移确实存在一定的补偿效果。最后讨论了进一步改善AMOLED像素电路稳定特性的方法和实际效果。

Abstract

Amorphous In-Ga-Zn-O thin film transistors (a-IGZO TFTs) have potentials to be used in pixel circuits of active matrix organic light emitting display (AMOLED). However

bias stress effect still involves a-IGZO TFTs

evidently influencing performance of the corresponding AMOLED pixel circuits. In this study

inverted-staggered a-IGZO TFT devices were fabricated and measured

following which the corresponding Spice model was created. In addition

the dependence of stress time on threshold voltage (

) shift was theoretically modeled. By using SPICE simulation tool

we studied the stability properties of a-IGZO TFT-OLED pixel circuits in the forms of 2T1C and 3T1C

which proves there exists somewhat compensation effect on the

shift in 3T1C pixel circuit. Finally

we discussed and analyzed the way to further improve stability of a-IGZO TFT-OLED pixel circuits.

关键词

Keywords

references

Si Y J, Li C X, Liu S Y. Two-TFT pixel electrode circuit simulation research for active matrix OLED [J]. Chin. J. Lumin.(发光学报), 2002, 23(5):518-522 (in Chinese).[2] Yin S, Jiang B, Li X F. Driving module for 17.8 cm AMOLED [J]. Chin. J. Liq. Cryst. & Disp.(液晶与显示), 2012, (3):347-351 (in Chinese).[3] Jeong J K, Jeong J H, Yang H W, et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel [J]. Appl. Phys. Lett., 2007, 91(11):113505-1-3.[4] Hayashi R, Ofuji M, Kaji N, et al. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O [J]. J. Soc. Inf. Disp., 2007, 15(11):915-921.[5] Jeong J K, Jeong J H, Yang H W, et al. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors [J]. J. Soc. Inf. Disp., 2009, 17(2):95-100.[6] Yin S, Chen J, Xia S C. Driving scheme for AMOLED based on FPGA [J]. Chin. J. Liq. Cryst. & Disp.(液晶与显示), 2011, 26(2):188-193 (in Chinese).[7] Li G Q, Zhang J W, Zhan Z W. Design of AMOLED drive circuit and linux driver [J]. Chin. J. Liq. Cryst. & Disp.(液晶与显示), 2011, 26(4):527-531 (in Chinese).[8] Chen C, Kanicki J, Abe K, et al. AM-OLED pixel circuits based on a-InGaZnO thin film transistors[C]// SID 2009 Digest, San Antonio USA:SID, 2009:1128-1132.[9] Kim J H, Kanicki J. Amorphous silicon thin-film transistors-based active-matrix organic light-emitting displays[C]// SID 2002 Digest, Boston, USA:SID, 2002:614-617.[10] Xu X L, Liu R, Guo X J, et al. Simulation and analysis of AMOLED pixel circuits [J]. Chin. J.Liq. Cryst. Disp.(液晶与显示), 2010, 25(4):565-568 (in Chinese).[11] Lee J M, Cho I T, Lee J H, et al. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistor [J]. Appl. Phys. Lett., 2008, 93(9):093504-1-3.

Views

261

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

A-IGZO Thin-film Transistors Integrated AMOLED Pixel Circuit with Data Line Controlled Light-emitting

Investigation of V_TH Detection Methods for AMOLED Pixel Circuit Design with IGZO-TFT

Design Analysis of Large Size Metal Oxide TFT Panel

Simulation of Amorphous-InGaZnO Thin Film Transistors Driven OLED Pixel Circuit

Determination of Mass Ratio of Chemical Composition in CdSe Thin Film Transistors by FAAS

Related Author

DENG Lian-wen

HUANG Sheng-xiang

LIAO Cong-wei

YU Tian-bao

LU Li

WANG Lan-lan

HU Zhao-wen

YIN Qian-yi

Related Institution

School of Physical Science and Electronics, Central South University

School of Physics and Electronics, Central South University

Guangzhou New Vision Optoelectronic Co., Ltd.

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰