pn Junction Characteristic of AlGaInP DH-LED

GAO Dan; LIANG Jing-qiu; LIANG Zhong-zhu; TIAN Chao; QIN Yu-xin; WANG Wei-biao

doi:10.3788/fgxb20133409.1213

您当前的位置：

首页 >

文章列表页 >

pn Junction Characteristic of AlGaInP DH-LED

更新时间：2020-08-12

- pn Junction Characteristic of AlGaInP DH-LED
- Chinese Journal of Luminescence Vol. 34, Issue 9, Pages: 1213-1218(2013)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室, 吉林长春 130033
  2. 中国科学院大学, 北京 100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133409.1213
  CLC： TN312.8
- Received：27 June 2013，
  
  Revised：23 July 2013，
  
  Published：10 September 2013
- 稿件说明：
移动端阅览
高丹, 梁静秋, 梁中翥, 田超, 秦余欣, 王维彪. AlGaInP DH-LED的pn结特性[J]. 发光学报, 2013,34(9): 1213-1218

GAO Dan, LIANG Jing-qiu, LIANG Zhong-zhu, TIAN Chao, QIN Yu-xin, WANG Wei-biao. pn Junction Characteristic of AlGaInP DH-LED[J]. Chinese Journal of Luminescence, 2013,34(9): 1213-1218
高丹, 梁静秋, 梁中翥, 田超, 秦余欣, 王维彪. AlGaInP DH-LED的pn结特性[J]. 发光学报, 2013,34(9): 1213-1218 DOI： 10.3788/fgxb20133409.1213.

GAO Dan, LIANG Jing-qiu, LIANG Zhong-zhu, TIAN Chao, QIN Yu-xin, WANG Wei-biao. pn Junction Characteristic of AlGaInP DH-LED[J]. Chinese Journal of Luminescence, 2013,34(9): 1213-1218 DOI： 10.3788/fgxb20133409.1213.

摘要

针对AlGaInP DH-LED的pn结特性进行了理论分析

得出电流密度

与电压

的关系。通过Matlab进行模拟分析

结果表明:当温度(300 K)一定时

在电压较小的情况下

电流密度成直线形式增大;当电压增大到一定值时

电流密度成对数形式增大;当电压过大时

电流密度几乎不增大。随着电压的升高

器件产生焦耳热增多

影响器件的工作特性

最终缩短LED的寿命。综合考虑

最后得出理论上的最佳发光驱动电压范围为2~2.33 V。

Abstract

The pn junction characteristics of AlGaInP DH-LED was analyzed by using Matlab simulation. The relationship of current density

and voltage

at certain temperature (300 K) was obtained. Under low voltage

the current density increases linearly with the voltage. When the voltage increases to a certain value

the current density increases in logarithmic pattern. When the voltage is too high

the current density does not increase with the voltage. With the increase of voltage

the Joule heat of the device

and affect the device characteristics

and finally shorten the LED life. Comprehensive consideration

the theory of optimal driving voltage range finally load at 2~2.33 V. The research results provide theoretical reference and guidance for the design of LED array integrated device.

关键词

Keywords

references

Chen G C, Fan G H, Chen L H. Optimum Al composition analysis on AlGaInP quaternary double heterojunetion light-emitting diodes [J]. Chin. J. Quant. Elect.(量子电子学报), 2003, 12(5):595-596 (in Chinese).[2] Li Y Z, Wang G H, Ma R Y. High brightness AlGaInP orange light emitting diodes [J]. Chin. J. Liquid Cryst. Disp.(液晶与显示), 1999, 14(2):110-111 (in Chinese).[3] Liu E K, Zhu B S, Luo J S. Physics of Semiconductor [M]. Beijing: National Defense Industry Press, 2007:152-161, 257, 297(in Chinese).[4] Huang K H, Yu J G, Kuo C P, et al. Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer [J]. Appl. Phys. Lett., 1992, 61(9):1045-1047.[5] Jin X. Design of micro LED display device and fabrication of isolation grooves[D]. Beijing: Graduate School of the Chinese Academy of Science, 2005 (in Chinese).[6] Kong L J, Ren L J. Evaluation of LCD life [J]. Chin. J. Liquid Crys. & Disp.(液晶与显示), 2011, 26(2):154-157 (in Chinese).[7] Chang S J, Chang C S, Su Y K, et al. Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes [J]. IEEE Photon. Technol. Lett., 1997, 9(2):182.[8] Meng Q J, Liu H B, Meng Q H. Physics of Semiconductor Devices [M]. Beijing: Science Press, 2005:29-30 (in Chinese).[9] Liu W C, Xia G Q, Li B H, et al. A novel high-temperature AlGaInP/GaAs double heterojunction bipolar transistor [J]. Chin. J. Semicond.(半导体学报), 2005, 26(4):756-759 (in Chinese).

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Thermal Analysis of AlGaInP-LED Mircro-cells

Design and Experiment of AlGaInP Mircro-LED Arrays with Double Strip Electrode

Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers

Effect of p-doping Density and Al Composition upon Luminescent Efficiency

Related Author

WANG Wei-biao

LYU Jin-guang

Li Chun

QIN Yu-xin

LIANG Zhong-zhu

LIANG Jing-qiu

TIAN Chao

Related Institution

State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

University of Chinese Academy of Sciences

State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

University of Chinese Academy of Sciences, Beijing 100049, China

Institute of Opto-electronic Materials and Technology, South China Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰