Influence of Mn-doping on The Structure Properties of ZnO：Mn Thin Films

LI Tong; JIE Qiong; ZHANG Yu; NI Xiao-chang; ZHAO Xin-wei

doi:10.3788/fgxb20133409.1167

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Influence of Mn-doping on The Structure Properties of ZnO：Mn Thin Films

更新时间：2020-08-12

- Influence of Mn-doping on The Structure Properties of ZnO：Mn Thin Films
- Chinese Journal of Luminescence Vol. 34, Issue 9, Pages: 1167-1172(2013)
- 作者机构：
  
  1. 天津职业技术师范大学电子工程学院天津,300222
  2. 东京理科大学物理系东京,日本
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133409.1167
  CLC： TB34;TB43
- Received：03 May 2013，
  
  Revised：02 July 2013，
  
  Published：10 September 2013
- 稿件说明：
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李彤, 介琼, 张宇, 倪晓昌, 赵新为. Mn掺杂对ZnO：Mn薄膜结构特性的影响[J]. 发光学报, 2013,34(9): 1167-1172

LI Tong, JIE Qiong, ZHANG Yu, NI Xiao-chang, ZHAO Xin-wei. Influence of Mn-doping on The Structure Properties of ZnO：Mn Thin Films[J]. Chinese Journal of Luminescence, 2013,34(9): 1167-1172
李彤, 介琼, 张宇, 倪晓昌, 赵新为. Mn掺杂对ZnO：Mn薄膜结构特性的影响[J]. 发光学报, 2013,34(9): 1167-1172 DOI： 10.3788/fgxb20133409.1167.

LI Tong, JIE Qiong, ZHANG Yu, NI Xiao-chang, ZHAO Xin-wei. Influence of Mn-doping on The Structure Properties of ZnO：Mn Thin Films[J]. Chinese Journal of Luminescence, 2013,34(9): 1167-1172 DOI： 10.3788/fgxb20133409.1167.

摘要

利用射频磁控溅射方法在玻璃衬底上室温沉积了一系列不同Mn掺杂的ZnO:Mn薄膜。结合Raman光谱

XRD谱和SEM分析了ZnO:Mn薄膜的结构特性。 Raman拟合结果显示

在Mn摩尔分数从0增加到5.6%的过程中

ZnO:Mn薄膜始终保持着六角纤锌矿结构;随着Mn掺杂浓度的增大

437 cm

-1

和527 cm

-1

位置上的Raman散射峰出现红移现象

说明Mn掺杂量的增加导致晶格更加无序

缺陷增多;当Mn摩尔分数达到15.8%时

647 cm

-1

处的Raman散射峰出现

暗示了MnO的产生

同时薄膜结晶质量变差。这一结论也得到了XRD和SEM结果的支持。

Abstract

ZnO:Mn thin films with different Mn concentration were prepared on glass substrates at room temperature using RF magnetron sputtering method. Raman spectroscopy

X-ray diffraction spectra and SEM were used to analyze the structural characteristics of the ZnO:Mn films. The results show that ZnO:Mn thin films have significant wurtzite structure with Mn doping mole fraction from 0 up to 5.6%. The redshift of Raman peaks at 437 cm

-1

and 527 cm

-1

can be explained by the lattice defects and disorder induced by the increasing of Mn concentration. The appearance of Raman spectra at 647 cm

-1

indicates the formation of MnO

leading to the worse crystallization of ZnO:Mn films

which is also evidenced by XRD and SEM results.

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Keywords

references

Jin Z, Fukumura T, Kawasaki M, et al. High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties [J]. Appl. Phys. Lett., 2001, 78(24):3824-3827.[2] Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J]. Science, 2000, 287:1019-1022.[3] Norton D P, Pearton S J, Hebard A F, et al. Ferromagnetism in Mn-implanted ZnO:Sn single crystals [J]. Appl. Phys. Lett., 2003, 82(2):239-241.[4] Behan A J, Mokhtari A, Blythe H J, et al. Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator [J]. Phys. Rev. Lett., 2008, 100(4):047206-1-4.[5] Zhang Y, Li T, Wang Y X, et al. Recent progress in developing magnetic properties of Mn-doped ZnO diluted magnetic semiconductors [J]. Adv. Mater. Res., 2012, 535-537:1252-1257.[6] Ni S L, Chang Y Q, Duo Y Z, et al. Raman and photoluminescence properties of Mn doped ZnO nanowires [J]. J. Funct. Mater.(功能材料), 2007, 38(8):1380-1382 (in Chinese).[7] Zhao X F, Wen D Z, Gao L X, et al. Preparation research of ZnO thin films at room-temperature by DC magnetron sputtering [J]. J. Synth. Cryst.(人工晶体学报), 2008, 37(2):461-465 (in Chinese).[8] Su X Q, Wang L, Chen J B, et al. Properties of ZnO thin films with effect of substrate temperature by PLD [J]. Acta Photonica Sinica (光子学报), 2010, 39(2):296-300 (in Chinese).[9] Teng X Y. Physical Characteristics of ZnO and ZnO-based Diluted Magnetic Semiconductors Fabricated by PLD[D]. Tianjin: Hebei University of Technology, 2011 (in Chinese).[10] Ke X W. Deposition and Ion Implantation of ZnO Thin Films[D]. Wuhan: Wuhan University, 2011 (in Chinese).[11] Duan L B, Rao G H, Wang Y C, et al. Magnetization and Raman scattering studies of (Co,Mn) codoped ZnO nanoparticles [J]. J. Appl. Phys., 2008, 104(1):013909-1-5.[12] Zhong H M, Wang J B, Chen X S, et al. Effect of Mn+ ion implantation on the Raman spectra of ZnO [J]. J. Appl. Phys., 2006, 99(10):103905-1-3.[13] Yang L W, Wu X L, Huang G S, et al. In situ synthesis of Mn-doped ZnO multileg nanostructures and Mn-related Raman vibration [J]. J. Appl. Phys., 2005, 97(1):014308-1-4.[14] Li T, Jie Q, Zhang Y, et al. Influence of working pressure on the structural properties of ZnO:Mn thin films [J]. Chin. J. Lumin.(发光学报), 2013, 34(6):711-715 (in Chinese).[15] Cheng B C, Xiao Y H, Wu G S, et al. The vibrational properties of one-dimensional ZnO:Ce nanostructures [J]. Appl. Phys. Lett., 2004, 84(3):416-418.[16] Bundesmann C, Ashkenov N, Schubert M, et al. Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J]. Appl. Phys. Lett., 2003, 83(10):1974-1976.[17] Wang J B, Huang G J, Zhong X L, et al. Raman scattering and high temperature ferromagnetism of Mn-doped ZnO nano-particles [J]. Appl. Phys. Lett., 2006, 88(25):252502-1-3.[18] Cao P, Bai Y, Qu Z, et al. Structural and optical properties of Mn-doped ZnO nanocolumns grown by cathodic electrodeposition [J]. Chin. J. Lumin.(发光学报), 2010, 31(5):635-638 (in Chinese).[19] Du C L, Gu Z B, You Y M, et al. Resonant Raman spectroscopy of (Mn,Co)-codoped ZnO films [J]. J. Appl. Phys., 2008, 103(2):023521-1-4.[20] Phan T L, Roger V, Cherns D, et al. Electron spin resonance and Raman studies of Mn-doped ZnO ceramics [J]. J. Appl. Phys., 2007, 101(9):09H103-1-3.[21] Huang Y Q, Liu M D, Li Z, et al. Raman spectroscopy study of ZnO thin films [J]. J. Funct. Mater.(功能材料), 2002, 3(6):653-655 (in Chinese).[22] Buciuman F, Patcas F, Radu C, et al. Vibrational spectroscopy of bulk and supported manganese oxides [J]. Phys. Chem. Chem. Phys., 1999, 1:185-190.

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Related Institution

School of Materials Science and Engineering， Changchun University of Science and Technology

Engineering Research Center of Optoelectronic Functional Materials， Ministry of Education

Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University

Beijing Radiation Center

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

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