Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy

WANG Yu-chao; WU Tian-zhun; ZHANG Quan-lin; CHEN Ming-ming; SU Long-xing; TANG Zi-kang

doi:10.3788/fgxb20133409.1149

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Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy

更新时间：2020-08-12

- Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy
- Chinese Journal of Luminescence Vol. 34, Issue 9, Pages: 1149-1154(2013)
- 作者机构：
  
  1. 香港科技大学物理系,香港,999077
  2. 中山大学理工学院光电材料国家重点实验室,广东广州,510000
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20133409.1149
  CLC： O484.4
- Received：17 June 2013，
  
  Revised：28 June 2013，
  
  Published：10 September 2013
- 稿件说明：
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王玉超, 吴天准, 张权林, 陈明明, 苏龙兴, 汤子康. MgZnO半导体材料光致发光以及共振拉曼光谱研究[J]. 发光学报, 2013,34(9): 1149-1154

WANG Yu-chao, WU Tian-zhun, ZHANG Quan-lin, CHEN Ming-ming, SU Long-xing, TANG Zi-kang. Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy[J]. Chinese Journal of Luminescence, 2013,34(9): 1149-1154
王玉超, 吴天准, 张权林, 陈明明, 苏龙兴, 汤子康. MgZnO半导体材料光致发光以及共振拉曼光谱研究[J]. 发光学报, 2013,34(9): 1149-1154 DOI： 10.3788/fgxb20133409.1149.

WANG Yu-chao, WU Tian-zhun, ZHANG Quan-lin, CHEN Ming-ming, SU Long-xing, TANG Zi-kang. Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy[J]. Chinese Journal of Luminescence, 2013,34(9): 1149-1154 DOI： 10.3788/fgxb20133409.1149.

摘要

用分子束外延设备在

面蓝宝石衬底上生长得到高质量Mg

O薄膜。X射线衍射显示

当Mg摩尔分数在0~32.7%范围内时

薄膜保持六方结构

(002)衍射峰半高宽为0.08~0.12

薄膜结晶质量与现有报道的最高水平相当。随着薄膜中Mg含量的增加

紫外发光峰由378 nm蓝移至303 nm。对Mg

0.108

0.892

O 薄膜变温光致发光光谱的研究发现

束缚激子发光随温度变化存在两个不同的猝灭过程。对不同Mg含量薄膜共振拉曼光谱的研究发现

(LO)声子模频移与Mg含量在一定范围内呈线性关系

这为确定Mg

O薄膜中的Mg含量提供了一种简单高效的方法。通过拉曼光谱与X射线衍射对比研究发现

拉曼光谱在确定MgZnO材料相变时具有更高的灵敏度。最后

研究了Mg

0.057

0.943

O薄膜的变温共振拉曼光谱

对A

(LO)和A

(2LO)声子模随温度而变化的现象给出了一定的理论解释。

Abstract

High-quality Mg

O semiconductor materials had been grown using plasma-assisted molecular beam epitaxy (P-MBE) on

-plane sapphire substrate by inserting special metal buffer layers. X-ray diffraction results show that the MgZnO films keep hexagonal structure when the mole fraction of Mg varies from 0 to 32.7%

and the full width at half maximum (FWHM) of the films are 0.08~0.12. To the best of our knowledge

the crystal quality should be one of the highest level ever reported. With the increasing of Mg content in the films

the room-temperature photoluminescence (PL) of ultraviolet emission peaks are shifted from 378 nm to 303 nm. A detailed study on Mg

0.108

0.892

O film by temperature-dependent photoluminescence shows that the bound exciton emitting has two different quenching processes with the temperature increasing. In addition

resonance Raman spectroscopy indicates that there is a linear relationship between the content of Mg in the films and the A

(LO) phonon mode frequency shift. This relationship provides a simple and efficient method to determine Mg content in Mg

O films. It is found that Raman spectroscopy is more sensitive to the component phase change than the X-ray diffraction characterization. Finally

the temperature-dependent Raman spectroscopy was employed for Mg

0.057

0.943

O and a theoretical explanation of A

(LO) and A

(2LO) phonon mode frequency shift with temperature was given and discussed.

关键词

Keywords

references

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