Defect Detection of Solar Cells Based on Electroluminescence Imaging

CHEN Wen-zhi; ZHANG Feng-yan; ZHANG Ran; LI Chao

doi:10.3788/fgxb20133408.1028

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Defect Detection of Solar Cells Based on Electroluminescence Imaging

更新时间：2020-08-12

- Defect Detection of Solar Cells Based on Electroluminescence Imaging
- Chinese Journal of Luminescence Vol. 34, Issue 8, Pages: 1028-1034(2013)
- 作者机构：
  
  厦门大学能源研究院,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133408.1028
  CLC： TN383+.1
- Received：18 April 2013，
  
  Revised：31 May 2013，
  
  Published：10 August 2013
- 稿件说明：
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陈文志, 张凤燕, 张然, 李超. 基于电致发光成像的太阳能电池缺陷检测[J]. 发光学报, 2013,34(8): 1028-1034

CHEN Wen-zhi, ZHANG Feng-yan, ZHANG Ran, LI Chao. Defect Detection of Solar Cells Based on Electroluminescence Imaging[J]. Chinese Journal of Luminescence, 2013,34(8): 1028-1034
陈文志, 张凤燕, 张然, 李超. 基于电致发光成像的太阳能电池缺陷检测[J]. 发光学报, 2013,34(8): 1028-1034 DOI： 10.3788/fgxb20133408.1028.

CHEN Wen-zhi, ZHANG Feng-yan, ZHANG Ran, LI Chao. Defect Detection of Solar Cells Based on Electroluminescence Imaging[J]. Chinese Journal of Luminescence, 2013,34(8): 1028-1034 DOI： 10.3788/fgxb20133408.1028.

摘要

为了检测太阳能电池存在的缺陷

给太阳能电池施加一定的正向偏压

利用CCD相机在暗室中探测电池的发光。探测分别在3种状态下进行:无滤光探测、过滤800 nm以下波长后探测和过滤800 nm以上波长后探测。研究发现:只有在过滤800 nm以下波长的镜片下探测效果最好

表明电池主要发红外光

其波长范围为850~1 200 nm。控制光探测器的探测时间

发现不同探测时间下电池的发光强度不同

探测时间相同但偏压不同则光强也不同。该方法可以检测出正向偏压下电池存在的各种缺陷类型。在反向电压下

薄膜电池会出现小光点

这表示缺陷区域和密度

研究证明薄膜电池也能发红外光且薄膜中存在区域缺陷。对低功率的电池片进行光探测发现

电池存在严重缺陷。上述结果表明

红外光探测可以直观、快速、方便地检测太阳能电池存在的缺陷。

Abstract

In order to detect the hidden defects of the solar cells

the eletroluminescence image was obtained by applying a certain forward bias voltage to solar cell in the darkroom using the light sensor CCD camera. The experiments were carried out at three states: without optical filter

filtering the wavelength less than 800 nm

and filtering the wavelength greater than 800 nm. It is found that the detection effect is the best only under the lens of filtration of less than 800 nm wavelength. It proves that the cell mainly emits infrared light of 850~1 200 nm. By controlling the detecting time

it is found that the light intensity is varied with the detection time

and also varied with the forward bias voltage in the same detection time. This method can detect all kinds of hidden defect type of the solar cells. Under the reverse voltage

thin film cell appears small spots which show defect area and density

and the studies prove that thin film cell also can send infrared light and the defects exist in the cell. In detecting low power cell

it is found that there are serious defects in the cell. The results show that infrared detection has rapid and convenient intuitive features for solar cells defect detection.

关键词

Keywords

references

Yin H P, Ye Z R, Wang X M, et al. Integrated research of electroluminescent technology in crystalline silicon solar cells [C]//The Eighth China Solar Grade Silicon and Photovoltaic Power Generation Conference. Shanghai： Shanghai Solar Energy Society, 2012.[2] LI Y H, Pan M, Pang A S, et al. The application of electroluminescence imaging to detection the hidden defects in silicon solar cells [J]. Chin. J. Lumin.(发光学报), 2011, 32(4)：378-382 (in Chinese).[3] Xiao Y J, Liu X Y, Xie Y S. The study of uniform design for the laser system in the photoluminescence detection of silicon solar Cell [C]// The Eighth China Solar Grade Silicon and Photovoltaic Power Generation Conference. Shanghai： Shanghai Solar Energy Society, 2012.[4] Wrfel P, Trupke T, Puzzer T, et al. Diffusion lengths of silicon solar cells from luminescence images [J]. J. Appl. Phys., 2007, 101(12)：123110-1-10.[5] Breitenstein O, Bauer J, Rakotoniaina J P. Aterial-induced shunts in multicrystal line silicon solar cells [J]. Semiconductors, 2007, 41(4)：440-443.[6] Breitenstein O, Bauer J, Trupke T, et al. On the detection of shunts in silicon solar cells by photo and electroluminescence imaging [J]. Progress in Photovoltaics： Research and Applications, 2008, 16(4)：325-330.[7] Zhang X Z, Zu L W, Zhu Q M. Research progress of synthesis and luminescent properties of PPV electroluminescent materials [J]. Science and Technology Innovation Herald, 2009, 15(1)：16-18.[8] Ding B D, Zhu W Q, Jiang X Y, et al. Synthesis and electroluminescence characteristics of anthracene derivatives [J]. Semicond. Optoelectron, 2008, 29(5)：680-683.[9] Niu Z H, Guo Q, Ren D Y, et al. The use of electroluminescence to study the radiation effects of multi-junction solar cell [J]. Research & Progress of SSE (固体电子学研究与进展), 2008, 28(1)：1-3 (in Chinese).[10] Ma T, Yu J S, Li L, et al. Characterization of organic light-emitting devices based on NPB doped in poly( N-vinylcarbazole) matrix [J]. Chin. J. Lumin.(发光学报), 2008, 29(5)：809-814 (in Chinese).[11] Munoz J, Lorenzo E, Martinez-Moreno F, et al. An investigation into hotspots in two large grid connected PV plants [J]. Progress in Photovoltaics： Research and Applications, 2008, 16(8)：693-701.

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