Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode

GU Wen; XU Tao; SHI Ji-feng; LI Xi-feng; ZHANG Jian-hua

doi:10.3788/fgxb20133408.1022

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Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode

更新时间：2020-08-12

- Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode
- Chinese Journal of Luminescence Vol. 34, Issue 8, Pages: 1022-1027(2013)
- 作者机构：
  
  1. 上海大学机电工程与自动化学院, 上海 200072
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20133408.1022
  CLC： O731
- Received：02 April 2013，
  
  Revised：07 June 2013，
  
  Published：10 August 2013
- 稿件说明：
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顾文, 徐韬, 石继锋, 李喜峰, 张建华. 薄膜厚度对GZO透明导电膜及其LED器件性能的影响[J]. 发光学报, 2013,34(8): 1022-1027

GU Wen, XU Tao, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode[J]. Chinese Journal of Luminescence, 2013,34(8): 1022-1027
顾文, 徐韬, 石继锋, 李喜峰, 张建华. 薄膜厚度对GZO透明导电膜及其LED器件性能的影响[J]. 发光学报, 2013,34(8): 1022-1027 DOI： 10.3788/fgxb20133408.1022.

GU Wen, XU Tao, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode[J]. Chinese Journal of Luminescence, 2013,34(8): 1022-1027 DOI： 10.3788/fgxb20133408.1022.

摘要

采用射频磁控溅射的方法制备了GZO透明导电薄膜

通过原子力显微镜(AFM)、X射线衍射仪(XRD)、霍尔效应测试仪及紫外-可见光分光光度计等手段研究了厚度对于GZO薄膜性能的影响

并制备了相应的LED器件。实验结果表明:随着薄膜厚度增加

薄膜结晶质量提高

薄膜的电阻率也随之降低。当厚度为500 nm时

薄膜的电阻率最低为2.7910

-4

同时其在460 nm蓝光区域的光透过率高达97.9%。对所制备的以GZO薄膜为透明电极的LED器件进行了测试分析

发现GZO薄膜厚度对LED的正向电压影响不大

但对LED芯片的出光效率有较大影响。

Abstract

GZO transparent conductive films were prepared by RF magnetron sputtering. The influence of thickness on GZO films was studied by several methods

including atomic force microscopy

XRD

Hall Effect tester and UV-Vis spectrophotometer. LEDs with GZO transparent conductive layers were also fabricated. These results show that

as the thickness increases

the crystal quality is improved and the resistivity of the film is reduced. When the thickness reached 500 nm

the lowest resistivity of 2.7910

-4

cm and the highest transmittance of 97.9% at 460 nm wavelength were obtained. However

the variation of film thickness has little effect on the forward voltage of LED. But it is an important factor on improving the light extraction efficiency of LEDs.

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references

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