Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer

GUO Wei-ling; YU Xin; LIU Jian-peng; FAN Xing; Bai Jun-xue

doi:10.3788/fgxb20133407.0918

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Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer

更新时间：2020-08-12

- Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer
- Chinese Journal of Luminescence Vol. 34, Issue 7, Pages: 918-923(2013)
- 作者机构：
  
  北京工业大学光电子技术实验室北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133407.0918
  CLC： TN383.1
- Received：20 February 2013，
  
  Revised：21 April 2013，
  
  Published：10 July 2013
- 稿件说明：
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郭伟玲, 俞鑫, 刘建朋, 樊星, 白俊雪. 具有电流阻挡层的不同GaN基LED的光电特性[J]. 发光学报, 2013,34(7): 918-923

GUO Wei-ling, YU Xin, LIU Jian-peng, FAN Xing, Bai Jun-xue. Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(7): 918-923
郭伟玲, 俞鑫, 刘建朋, 樊星, 白俊雪. 具有电流阻挡层的不同GaN基LED的光电特性[J]. 发光学报, 2013,34(7): 918-923 DOI： 10.3788/fgxb20133407.0918.

GUO Wei-ling, YU Xin, LIU Jian-peng, FAN Xing, Bai Jun-xue. Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(7): 918-923 DOI： 10.3788/fgxb20133407.0918.

摘要

研究对比了InGaN/GaN多量子阱发光二极管中p电极下的不同SiO

电流阻挡层的光电特性。 6种样品被分为3组: 普通表面、表面粗化、表面粗化+边墙腐蚀。每组都有两种结构

一种具有电流阻挡层

另一种没有电流阻挡层。每组中

具有电流阻挡层的LED在20 mA下的正向电压分别为3.156

3.282

3.284 V

略高于不含电流阻挡层的样品(

=3.105

3.205

3.210 V). 但是

具有电流阻挡层的LED的光效和光功率要优于无电流阻挡层的器件

在20 mA下的光功率分别提高了10.20%、12.19%和11.49%。这些性能的提升都要归功于电流阻挡层良好的电流扩展效应

同时电流阻挡层还可以减小p电极下的寄生光吸收。

Abstract

InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) were fabricated

in which a SiO

current blocking layer (CBL) was inserted underneath the p-pad electrode. Samples were divided into three groups: normal surface

surface roughing

and surface roughing plus side wall etching. Each group had two different structure devices: with and without CBL. In each group

the voltage

at 20 mA for the LEDs with a CBL (

=3.156

3.282

3.284 V) were slightly higher than those of without CBL (

=3.105

3.205

3.210 V). However

the luminous efficiency and the light-output power of the LEDs with CBL were better than those without CBL. At 20 mA current

the output power of the LEDs with a CBL increase 10.20%

12.19%

11.49% compared with those without CBL. It is due to the current spreading effect in CBL devices. The CBL can also reduce parasitic optical absorption in the p-pad electrode.

关键词

Keywords

references

Yin H B, Wang X L, Ran J X, et al. High quality GaN based LED epitaxial layers grown in a homemade MOCVD system[J]. J. Semicond., 2011, 32(3):0330021-1-4.[2] Jeong H H, Lee S Y, Jeong Y K, et al. Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer[J]. Electrochem. Solid-State Lett., 2010, 13(7):H237-H239.[3] Lin Y C, Chang S J, Su Y K, et al. High power nitride based light emitting diodes with Ni/ITO p-type contacts[J]. Solid-State Electron., 2003, 47(9):1565-1568.[4] Zhou Z, Feng S W, Zhang G C, et al. The aging characteristics of high-power GaN-based white light-emitting diodes[J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1046-1050 (in Chinese).[5] Wang W J, Li X F, Shi J F, et al. Effect of ITO interface modulation layer on the performances of LEDs with Ga-doped ZnO electrode[J]. Chin. J. Lumin.(发光学报), 2012, 33(2):210-215 (in Chinese).[6] Xu X W, Cui B F, Zhu Y X, et al. Research of dielectric photonic crystal on red LED to increase luminous flux[J]. Acta Phys.Sinica (物理学报), 2012, 61(15):154213-1-5 (in Chinese).[7] Linder N, Kugler S, Stauss P, et al. High-brightness AlGaInP light-emitting diodes using surface texturing[J]. SPIE, 2001, 4278:19-25.[8] Pan H P, Huang L W, Li R, et al. Finite element model of GaN based LED and the optimization of the mesa structure[J]. Chin. J. Lumin.(发光学报), 2007, 28(1):114-120 (in Chinese).[9] Zhang Y H, Guo W L, Gao W, et al. Properties of the ITO layer in a novel red light-emitting diode[J]. J. Semicond., 2010, 31(4):0430021-1-5.[10] Wang H C, Su Y K, Lin C L, et al. InGaN/GaN light emitting diodes with a lateral current blocking structure[J]. Jpn. J. Appl. Phys., 2004, 43(4B):2006-2007.[11] Huh C, Lee J, Kim D, et al. Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer[J]. J. Appl. Phys., 2002, 92(5):2248-2250.[12] Guo E Q, Liu Z, Qiang W, et al. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J]. J. Semiconductors, 2011, 32(6):0640071-1-4.[13] Deng Y L, Liao C J, Liu S H, et al. Calculating external quantum efficiency of high bright light emitting diodes[J]. Chin. J. Quant. Electron.(量子电子学报), 2002, 19(1):65-69 (in Chinese).

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