CHEN Yi-peng, XIN Chuan-zhen, LUO Cheng-yuan, WANG Li-shi, GE-Lin, ZHANG Xiao-song, XU Jian-ping, LI Lan. Influence of PVK Hole Transport Layer on Ndq<sub>3</sub> Near-infrared Organic Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2013,34(7): 888-893
CHEN Yi-peng, XIN Chuan-zhen, LUO Cheng-yuan, WANG Li-shi, GE-Lin, ZHANG Xiao-song, XU Jian-ping, LI Lan. Influence of PVK Hole Transport Layer on Ndq<sub>3</sub> Near-infrared Organic Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2013,34(7): 888-893 DOI: 10.3788/fgxb20133407.0888.
Influence of PVK Hole Transport Layer on Ndq3 Near-infrared Organic Light Emitting Diodes
A three-layered near-infrared OLED with structure of ITO/PEDOT:PSS/PVK/neodymium tris-(8-hydroxyquinoline) (Ndq
3
)/Al was fabricated
in which poly(N-vinylcarbazole) (PVK) was hole transport layer
and poly(3
4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) was hole injection layer. The EL spectrum shows three emission peaks at 905
1 064
1 340 nm in the near-infrared range which are correspond to Nd
3+
transitions of
4
F
3/2
4
I
9/2
4
F
3/2
4
I
11/2
4
F
3/2
4
I
13/2
respectively. The influence mechanism of functional layers was discussed with help of
I-V
curves
in reference with single layer device (ITO/Ndq
3
/Al) and double layer device (ITO/PVK/Ndq
3
/Al). The increase in device current corresponding to the reduction of the series resistance was observed and was related to the high conductivity of PEDOT:PSS layer. The joint action on the hole injection barrier by PVK and PEDOT:PSS was contributed to the improvement of the charge carriers balance of device and EL emission intensity. Also
the decrease of the ITO surface roughness was realized as one of the key issue for the performance improvement.
关键词
Keywords
references
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