Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ZnMgO Multi-quantum Wells

SHANG Kai; ZHANG Zhen-zhong; LI Bing-hui; XU Hai-yang; ZHANG Li-gong; ZHAO Dong-xu; LIU Le

doi:10.3788/fgxb20133407.0872

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Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ZnMgO Multi-quantum Wells

更新时间：2020-08-12

- Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ZnMgO Multi-quantum Wells
- Chinese Journal of Luminescence Vol. 34, Issue 7, Pages: 872-876(2013)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  2. 中国科学院大学北京,100049
  3. 东北师范大学物理学院, 吉林长春 130024
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20133407.0872
  CLC： O484.4
- Received：22 March 2013，
  
  Revised：02 May 2013，
  
  Published：10 July 2013
- 稿件说明：
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尚开, 张振中, 李炳辉, 徐海阳, 张立功, 赵东旭, 刘雷, 王双鹏, 申德振. 非对称ZnO/ZnMgO双量子阱内量子效率的提高[J]. 发光学报, 2013,34(7): 872-876

SHANG Kai, ZHANG Zhen-zhong, LI Bing-hui, XU Hai-yang, ZHANG Li-gong, ZHAO Dong-xu, LIU Lei, WANG Shuang-peng, SHEN De-zhen. Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ZnMgO Multi-quantum Wells[J]. Chinese Journal of Luminescence, 2013,34(7): 872-876
尚开, 张振中, 李炳辉, 徐海阳, 张立功, 赵东旭, 刘雷, 王双鹏, 申德振. 非对称ZnO/ZnMgO双量子阱内量子效率的提高[J]. 发光学报, 2013,34(7): 872-876 DOI： 10.3788/fgxb20133407.0872.

SHANG Kai, ZHANG Zhen-zhong, LI Bing-hui, XU Hai-yang, ZHANG Li-gong, ZHAO Dong-xu, LIU Lei, WANG Shuang-peng, SHEN De-zhen. Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ZnMgO Multi-quantum Wells[J]. Chinese Journal of Luminescence, 2013,34(7): 872-876 DOI： 10.3788/fgxb20133407.0872.

摘要

在

-plane面蓝宝石衬底上生长了ZnO/Zn

0.85

0.15

O非对称双量子阱

其内量子效率相对于对称量子阱有了显著的提高。ZnO/Zn

0.85

0.15

O 的10周期对称量子阱和5周期非对称双量子阱都是利用等离子体辅助分子束外延技术制备的。ZnO/Zn

0.85

0.15

O非对称双量子阱的内量子效率提高至对称阱的1.56倍。时间分辨光谱和光致发光谱测试结果证实

在ZnO/Zn

0.85

0.15

O非对称双量子阱中存在从窄阱到宽阱的激子隧穿过程

这是内量子效率提高的主要原因。

Abstract

We report a dramatic increase in the internal quantum efficiency (IQE) of ZnO/ZnMgO multi-quantum wells (MQWs) fabricated on

-plane sapphire substrate by introducing asymmetric double-quantum-well (ADQW) structure. A marked enhancement in efficiency

by as much as 1.56 times

was observed for the ZnO/ZnMgO five-period ADQW grown by plasma-assisted molecular beam epitaxy (P-MBE)

compared to the ten-period symmetrical MQWs with asymmetric structure. The effects of excitons tunneling from the narrow well to the wide well

which was proved by photoluminescence spectra and time-resolved photoluminescence spectroscopy

can influence the IQE.

关键词

Keywords

references

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Related Institution

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School of Materials Science and Engineering， Changchun University of Science and Technology

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