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Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity
更新时间:2020-08-12
    • Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity

    • Chinese Journal of Luminescence   Vol. 34, Issue 6, Pages: 797-802(2013)
    • DOI:10.3788/fgxb20133406.0797    

      CLC: O47
    • Received:06 March 2013

      Revised:18 April 2013

      Published:10 June 2013

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  • LAI Xiao-hui, ZUO Ran, SHI Jun-cao, LIU Peng, TONG Yu-zhen, ZHANG Guo-yi. Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity[J]. Chinese Journal of Luminescence, 2013,34(6): 797-802 DOI: 10.3788/fgxb20133406.0797.

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