DENG Xu-guang, HAN Jun, XING Yan-hui, WANG Jia-xing, CUI Ming, CHEN Xiang, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of H<sub>2</sub> Carrier Gas on Epitaxy of AlN Buffer Layer[J]. Chinese Journal of Luminescence, 2013,34(6): 776-781
DENG Xu-guang, HAN Jun, XING Yan-hui, WANG Jia-xing, CUI Ming, CHEN Xiang, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of H<sub>2</sub> Carrier Gas on Epitaxy of AlN Buffer Layer[J]. Chinese Journal of Luminescence, 2013,34(6): 776-781 DOI: 10.3788/fgxb20133406.0776.
Influence of H2 Carrier Gas on Epitaxy of AlN Buffer Layer
AlN buffer and GaN epitaxial layer were prepared by MOCVD on Si(111) substrate. The effect of H
2
carrier gas flow for AlN buffer epitaxy on GaN was investigated by high resolution X-ray diffraction
ellipsometer and atomic force microscope. It is found that AlN thickness increases (
i.e
. the increasing of AlN growth rate) with the increasing of H
2
flow. The surface roughness of AlN also tends to increase. The change in surface roughness is attributed to the enhancement of island-growth mode. The increasing of AlN buffer thickness contributes to the increasing of tensile stress which promotes AlN island growth mode. The higher density of islands with bad orientation was observed by AFM on AlN buffer layer which was grown with higher H
2
flow.
scan of (0002) and (101 2) show that the increasing of H
2
flow leads to the increasing in FWHM of GaN(
i.e
. the increasing in density of screw threading dislocation and edge threading dislocation). Because the three-dimensional growth of GaN starts on the top of AlN islands
the AlN buffer layer with high density of islands contributes to rapid coalescence of GaN islands that will lead high density of edge threading dislocation. The bad orientation of AlN islands on buffer layer will lead to GaN thin film with high density of screw threading dislocation. The obtained data demonstrate that the H
2
carrier gas flow plays an important role in improving the crystal quality of GaN.
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references
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