Luminescence Mechanism in Green InGaN/GaN LED with An Insertion Layer Between The Multiple Quantum Wells and n-GaN Layer

SONG Shi-wei; LIU Yang; LIANG Hong-wei; XIA Xiao-chuan; ZHANG Ke-xiong; YANG De-chao; DU G

doi:10.3788/fgxb20133406.0744

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Luminescence Mechanism in Green InGaN/GaN LED with An Insertion Layer Between The Multiple Quantum Wells and n-GaN Layer

更新时间：2020-08-12

- Luminescence Mechanism in Green InGaN/GaN LED with An Insertion Layer Between The Multiple Quantum Wells and n-GaN Layer
- Chinese Journal of Luminescence Vol. 34, Issue 6, Pages: 744-747(2013)
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 吉林大学电子科学与工程学院,吉林长春,130012
  3. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海,200050
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133406.0744
  CLC： TN304.2
- Received：02 February 2013，
  
  Revised：19 April 2013，
  
  Published：10 June 2013
- 稿件说明：
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宋世巍, 柳摇阳, 梁红伟, 夏小川, 张克雄, 杨德超, 杜国同. 低温插入层对绿光LED的发光影响[J]. 发光学报, 2013,34(6): 744-747

SONG Shi-wei, LIU Yang, LIANG Hong-wei, XIA Xiao-chuan, ZHANG Ke-xiong, YANG De-chao, DU Guo-tong. Luminescence Mechanism in Green InGaN/GaN LED with An Insertion Layer Between The Multiple Quantum Wells and n-GaN Layer[J]. Chinese Journal of Luminescence, 2013,34(6): 744-747
宋世巍, 柳摇阳, 梁红伟, 夏小川, 张克雄, 杨德超, 杜国同. 低温插入层对绿光LED的发光影响[J]. 发光学报, 2013,34(6): 744-747 DOI： 10.3788/fgxb20133406.0744.

SONG Shi-wei, LIU Yang, LIANG Hong-wei, XIA Xiao-chuan, ZHANG Ke-xiong, YANG De-chao, DU Guo-tong. Luminescence Mechanism in Green InGaN/GaN LED with An Insertion Layer Between The Multiple Quantum Wells and n-GaN Layer[J]. Chinese Journal of Luminescence, 2013,34(6): 744-747 DOI： 10.3788/fgxb20133406.0744.

摘要

利用MOCVD 技术在蓝宝石衬底上外延生长了具有低温插入层结构的绿光LED

研究了具有插入层结构的LED 的发光特性。插入层的引入增加了In 在量子阱中的并入

并且引起了波长红移。经过分析

认为是In 的相分离和极化场带来的红移

且恶化了器件的性能。

Abstract

The green light emitting diode (LED) with an insertion layer between the multiple quantum wells and n-GaN layer was grown on

-plane sapphire substrate by metal organic chemical vapor deposition. The structural and optical properties of the LEDs with and without insertion layer were investigated. It is found that the insertion layer can promote the combination of In concentration

and induce an overall red-shift of wavelength. We speculate that the In phase separation and piezoelectric field would be responsible for the wavelength red-shift

the performance of LED deteriorated either.

关键词

Keywords

references

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