SHANG Kai, ZHANG Zhen-zhong, LI Bing-hui, XU Hai-yang, ZHANG Li-gong, ZHAO Dong-xu, LIU Lei, WANG Shuang-peng, SHEN De-zhen. Decrease of Optimal Accelerating Voltage of ZnO-based Quantum Wells Pumped by Electron Beam[J]. Chinese Journal of Luminescence, 2013,34(6): 692-697
SHANG Kai, ZHANG Zhen-zhong, LI Bing-hui, XU Hai-yang, ZHANG Li-gong, ZHAO Dong-xu, LIU Lei, WANG Shuang-peng, SHEN De-zhen. Decrease of Optimal Accelerating Voltage of ZnO-based Quantum Wells Pumped by Electron Beam[J]. Chinese Journal of Luminescence, 2013,34(6): 692-697 DOI: 10.3788/fgxb20133406.0692.
Decrease of Optimal Accelerating Voltage of ZnO-based Quantum Wells Pumped by Electron Beam
. accelerating voltage of electron beam in ZnO/ZnMgO multi-quantum wells was reported in this paper. The samples were grown on sapphire substrate by plasma-assisted molecular beam epitaxy. By exciton tunneling
the excitation efficiency was improved significantly. In a sample with asymmetric double-quantum-wells
a marked reduction of the optimal acceleration voltage from 7 kV to 5 kV was obtained compared to the symmetrical multi-quantum well sample.
关键词
Keywords
references
Oto T, Banal R G, Kataoka K, et al. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam[J]. Nat. Photon., 2010, 4:767-771.[2] Gronin S V, Sorokin S V, Sedova I V, et al. ZnSe-based laser structures for electron-beam pumping with graded index waveguide[J]. Phys. Status Solidi (c), 2010, 7(6):1694-1696.[3] Watanabe K, Taniguchi T, Niiyama T, et al. Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride[J]. Nat. Photon.,2009, 3:591-594.[4] Watanabe K, Taniguchi T, Kanda H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal[J]. Nat. Mater.,2004, 3:404-409.[5] Gruber T, Kirchner C, Kling R, et al. ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region[J]. Appl. Phys. Lett.,2004, 84(26):5359-5361.[6] Su S C, Lu Y M, Zhang Z Z, et al. Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by X-ray photoelectron spectroscopy[J]. Appl. Phys. Lett.,2008, 93(8):082108-1-8.[7] Sun J W, Lu Y M, Liu Y C, et al. Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate[J]. J. Phys.D, 2007, 40(21):6541-6544.[8] Wei Z P, Lu Y M, Shen D Z, et al. Effect of interface on luminescence properties in ZnO/MgZnO heterostructures[J]. J. Lumin., 2006, 119/120:551-555.[9] Ye J D, Zhao H, Liu W, et al. Theoretical and experimental depth-resolved cathodoluminescence microanalysis of excitonic emission from ZnO epilayers[J]. Appl. Phys. Lett.,2008, 92(13):131914-1-3.[10] Kanaya K, Okayama S. Penetration and energy-loss theory of electrons in solid targets[J]. J. Phys. D, 1972, 5(1):43-58.[11] Drouin D, Couture A R, Joly D, et al. CASINO V2.42: A fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users[J]. Scanning, 2007, 29(1):92-101.[12] Yu G Y, Fan X W, Zhang J Y, et al. The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well[J]. J. Electron. Mater.,1998, 27(9):1007-1009.[13] Yu G Y, Fan X W, Zhang J Y, et al. Laser action in ZnCdSe/ZnSe asymmetric double-quantum-well[J]. Solid State Commun.,1999, 110(1):127-130.[14] Su S C, Lu Y M, Xing G Z, et al. Spontaneous and stimulated emission of ZnO/Zn0.85Mg0.15O asymmetric double quantum wells[J]. Superlattices and Microstructures,2010, 48(5):485-490.
Quantum-confined Stark Effects in Cathodoluminescence of ZnO/Zn0.85Mg0.15O Quantum Wells Pumped by Large Beam Current
Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ZnMgO Multi-quantum Wells
Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain
ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence
Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD
Related Author
SHANG Kai
ZHANG Zhen-zhong
LI Bing-hui
XU Hai-yang
ZHANG Li-gong
ZHAO Dong-xu
LIU Lei
WANG Shuang-peng
Related Institution
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
School of Physics, Northeast Normal University
University of the Chinese Academy of Sciences, Beijing 100049, China
Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University
School of Materials Science and Engineering, Changchun University of Science and Technology