Application of Laser Technique for Fabrication of Rear Dot-contact of PERC Crystalline Silicon Solar Cell

WANG Shi-jian; JIA Rui; ZHANG Xi-qing; SUN Yun; MENG Yang-long; DING Wu-chang; CUI Dong-me

doi:10.3788/fgxb20133405.0634

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Application of Laser Technique for Fabrication of Rear Dot-contact of PERC Crystalline Silicon Solar Cell

更新时间：2020-08-12

- Application of Laser Technique for Fabrication of Rear Dot-contact of PERC Crystalline Silicon Solar Cell
- Chinese Journal of Luminescence Vol. 34, Issue 5, Pages: 634-638(2013)
- 作者机构：
  
  1. 中国科学院微电子研究所太阳能电池研究中心北京,100029
  2. 北京交通大学理学院光电子技术研究所北京,100044
  3. 许昌开普电器检测研究院,河南许昌,461000
- 作者简介：
- 基金信息：
  
  973"863"
- DOI：10.3788/fgxb20133405.0634
  CLC： TM914.4+
- Received：22 February 2013，
  
  Revised：02 April 2013，
  
  Published：10 May 2013
- 稿件说明：
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王仕建, 贾锐, 张希清, 孙昀, 孟彦龙, 丁武昌, 崔冬萌, 陈晨, 任高全. 激光在PERC晶硅电池中背面点接触电极制备中的应用[J]. 发光学报, 2013,34(5): 634-638

WANG Shi-jian, JIA Rui, ZHANG Xi-qing, SUN Yun, MENG Yang-long, DING Wu-chang, CUI Dong-meng, CHEN Chen, REN Gao-quan. Application of Laser Technique for Fabrication of Rear Dot-contact of PERC Crystalline Silicon Solar Cell[J]. Chinese Journal of Luminescence, 2013,34(5): 634-638
王仕建, 贾锐, 张希清, 孙昀, 孟彦龙, 丁武昌, 崔冬萌, 陈晨, 任高全. 激光在PERC晶硅电池中背面点接触电极制备中的应用[J]. 发光学报, 2013,34(5): 634-638 DOI： 10.3788/fgxb20133405.0634.

WANG Shi-jian, JIA Rui, ZHANG Xi-qing, SUN Yun, MENG Yang-long, DING Wu-chang, CUI Dong-meng, CHEN Chen, REN Gao-quan. Application of Laser Technique for Fabrication of Rear Dot-contact of PERC Crystalline Silicon Solar Cell[J]. Chinese Journal of Luminescence, 2013,34(5): 634-638 DOI： 10.3788/fgxb20133405.0634.

摘要

在经过Al

全钝化发射极钝化局部背接触(PERC)结构电池的背面实现良好的接触电极一直是制约着PERC高效电池向产业化推广的重要因素之一。本文采用532 nm激光烧蚀背面钝化介质层方法和传统的光刻工艺来实现背面电极的局部接触

并对两种方法进行详细的比较与分析。对激光烧蚀和激光烧结两种不同的局部接触电极制备方式进行了对比

发现激光烧蚀是更为适宜的工艺方式。相较于激光烧结

以激光烧蚀方式制备的电池的串联面接触电阻从10.7 cm

降到 1.24 cm

效率从4.2% 提高到10.7%。

Abstract

One of the factors restricting the appliance of high-efficiency passivated emitter and rear cell(PERC)-type solar cell to the industrial silicon solar cell is that the formation of good ohmic contacts on the rear side of PERC-type solar cell passivated by Al

film. This work focuses on the formation of rear local contacts instead of high efficiency by using laser ablation with 532 nm wavelength and conventional photolithographic technique. The results of the contact formed by these two methods are compared and analyzed. In addition

we compare and analyze the rear local contacts formed by laser ablation and laser firing using 532 nm line laser. The results suggest that the laser ablation can provide better contacts in the PERC-type solar cell. The contact resistance of the solar cell using laser ablation technique is reduced to 1.24 cm

from 10.7 cm

using laser firing method

and the efficiency is enhanced from 4.2% to 10.7%.

关键词

Keywords

references

Hoex B, Schmidt J, Pohl P, et al. Silicon surface passivation by atomic layer deposited Al2O3 [J]. J. Appl. Phys., 2008, 104(4):044903-1-12.[2] Hoex B, Gielis J J H, Van de Sanden M C M, et al. On the c-Si surface passivation mechanism by the negative-chargedielectric Al2O3 [J]. J. Appl. Phys., 2008, 104(11):113703-1-7.[3] Benick J, Hoex B, Van de Sanden M C M, et al. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters [J]. Appl. Phys. Lett., 2008, 92(25):253504-1-3.[4] Hoex B, Schmidt J, Bock R, et al. Excellent passivation of highly doped p-type Si surfaces by the negativecharge-dielectric Al2O3 [J]. Appl. Phys. Lett., 2007, 91(11):112107-1-3.[5] Zhao J H, Wang A H, Green M A. 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates [J]. Progress in Photovoltaics, 1999, 7(6):471-474.[6] Hermann S, Dezhdar T, Harder N P, et al. Impact of surface topography and laser pulse duration for laser ablation of solar cell front side passivating SiNx layers [J]. J. Appl. Phys., 2010, 108(11):114514-1-8.[7] Mingirulli N, Keding R, Specht J, et al. Hot-melt inkjet as masking technology for back-contacted cells [C]// The 34th IEEE PVSC, Philadelphia: IEEE, 2009:1064-1068.[8] Engelhart P, Harder N P, Horstmann T, et al. Laser ablation of passivating SiNx layers for locally contacting emitters of high-efficiency solar cells // The 4th WCPEC, Waikoloa: IEEE, 2006:1024-1027.[9] Snchez-Aniorte I, Colina M, Perales F, et al. Optimization of laser fired contact processes in c-Si solar cells [J]. Physics Procedia, 2010, 5:285-292.

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